Low-cost rear side floating junction solar-cell issues on mc-Si

S. De Wolf; F. Duerinckx; G. Agostinelli; G. Beaucarne

doi:10.1016/j.solmat.2006.02.035

Low-cost rear side floating junction solar-cell issues on mc-Si

S. De Wolf^*, F. Duerinckx, G. Agostinelli, G. Beaucarne

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Rear side floating junction solar cells with localised contacts often show parasitic shunting losses. For p-type material, this is due to tunnelling that takes places between the passivating n⁺-type rear junction and the p⁺-type back surface field region underneath localised rear contacts. To avoid this, the rear metallisation and the passivation layer should electronically be separated. Alternatively, the (induced) doping concentration of these layers could be optimised. This paper discusses the constraints met upon incorporation of such lowly recombinative structures into a low-cost solar cell process on multi-crystalline Si (mc-Si) material.

Original language	English (US)
Pages (from-to)	3431-3437
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	90
Issue number	18-19
DOIs	https://doi.org/10.1016/j.solmat.2006.02.035
State	Published - Nov 23 2006
Externally published	Yes

Bibliographical note

Funding Information:
The funding of parts of this work by the EC in the frame of, respectively, the Advocate (contract no.: ENK6-CT2001-00562) and Fantasi (contract no.: ENK6-CT2001-00561) projects is gratefully acknowledged.

Keywords

Screenprinting
Surface passivation
Thin silicon wafers

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solmat.2006.02.035

Cite this

@article{009152de8fa34311958d4deadff1c5da,

title = "Low-cost rear side floating junction solar-cell issues on mc-Si",

abstract = "Rear side floating junction solar cells with localised contacts often show parasitic shunting losses. For p-type material, this is due to tunnelling that takes places between the passivating n+-type rear junction and the p+-type back surface field region underneath localised rear contacts. To avoid this, the rear metallisation and the passivation layer should electronically be separated. Alternatively, the (induced) doping concentration of these layers could be optimised. This paper discusses the constraints met upon incorporation of such lowly recombinative structures into a low-cost solar cell process on multi-crystalline Si (mc-Si) material.",

keywords = "Screenprinting, Surface passivation, Thin silicon wafers",

author = "{De Wolf}, S. and F. Duerinckx and G. Agostinelli and G. Beaucarne",

note = "Funding Information: The funding of parts of this work by the EC in the frame of, respectively, the Advocate (contract no.: ENK6-CT2001-00562) and Fantasi (contract no.: ENK6-CT2001-00561) projects is gratefully acknowledged. ",

year = "2006",

month = nov,

day = "23",

doi = "10.1016/j.solmat.2006.02.035",

language = "English (US)",

volume = "90",

pages = "3431--3437",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

number = "18-19",

}

TY - JOUR

T1 - Low-cost rear side floating junction solar-cell issues on mc-Si

AU - De Wolf, S.

AU - Duerinckx, F.

AU - Agostinelli, G.

AU - Beaucarne, G.

N1 - Funding Information: The funding of parts of this work by the EC in the frame of, respectively, the Advocate (contract no.: ENK6-CT2001-00562) and Fantasi (contract no.: ENK6-CT2001-00561) projects is gratefully acknowledged.

PY - 2006/11/23

Y1 - 2006/11/23

N2 - Rear side floating junction solar cells with localised contacts often show parasitic shunting losses. For p-type material, this is due to tunnelling that takes places between the passivating n+-type rear junction and the p+-type back surface field region underneath localised rear contacts. To avoid this, the rear metallisation and the passivation layer should electronically be separated. Alternatively, the (induced) doping concentration of these layers could be optimised. This paper discusses the constraints met upon incorporation of such lowly recombinative structures into a low-cost solar cell process on multi-crystalline Si (mc-Si) material.

AB - Rear side floating junction solar cells with localised contacts often show parasitic shunting losses. For p-type material, this is due to tunnelling that takes places between the passivating n+-type rear junction and the p+-type back surface field region underneath localised rear contacts. To avoid this, the rear metallisation and the passivation layer should electronically be separated. Alternatively, the (induced) doping concentration of these layers could be optimised. This paper discusses the constraints met upon incorporation of such lowly recombinative structures into a low-cost solar cell process on multi-crystalline Si (mc-Si) material.

KW - Screenprinting

KW - Surface passivation

KW - Thin silicon wafers

UR - http://www.scopus.com/inward/record.url?scp=33748320819&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2006.02.035

DO - 10.1016/j.solmat.2006.02.035

M3 - Article

AN - SCOPUS:33748320819

SN - 0927-0248

VL - 90

SP - 3431

EP - 3437

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 18-19

ER -

Low-cost rear side floating junction solar-cell issues on mc-Si

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this