Low-cost high-quality crystalline germanium based flexible devices

Joanna M. Nassar; Aftab M. Hussain; Jhonathan Prieto Rojas; Muhammad Mustafa Hussain

doi:10.1002/pssr.201409257

Low-cost high-quality crystalline germanium based flexible devices

Joanna M. Nassar, Aftab M. Hussain, Jhonathan Prieto Rojas, Muhammad Mustafa Hussain

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.

Original language	English (US)
Pages (from-to)	794-800
Number of pages	7
Journal	physica status solidi (RRL) - Rapid Research Letters
Volume	08
Issue number	09
DOIs	https://doi.org/10.1002/pssr.201409257
State	Published - Jun 16 2014

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): CRG-1-2012-HUS-008
Acknowledgements: We thank KAUST OCRF Competitive Research Grant (CRG) 1 CRG-1-2012-HUS-008 for supporting this research.

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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10.1002/pssr.201409257

Cite this

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title = "Low-cost high-quality crystalline germanium based flexible devices",

abstract = "High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.",

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Low-cost high-quality crystalline germanium based flexible devices

Abstract

Bibliographical note

ASJC Scopus subject areas

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