Low-cost high-quality crystalline germanium based flexible devices

Joanna M. Nassar, Aftab M. Hussain, Jhonathan Prieto Rojas, Muhammad Mustafa Hussain

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.
Original languageEnglish (US)
Pages (from-to)794-800
Number of pages7
Journalphysica status solidi (RRL) - Rapid Research Letters
Issue number09
StatePublished - Jun 16 2014

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): CRG-1-2012-HUS-008
Acknowledgements: We thank KAUST OCRF Competitive Research Grant (CRG) 1 CRG-1-2012-HUS-008 for supporting this research.

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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