Long-wavelength MBE grown GaInNAs quantum well laser emitting at 1270 nm

M. S. Alias; F. Maskuriy; S. M. Mitani

doi:10.1134/S1054660X1201001X

Long-wavelength MBE grown GaInNAs quantum well laser emitting at 1270 nm

M. S. Alias^*, F. Maskuriy, S. M. Mitani

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this paper, we report on comprehensive theoretical optical properties analysis and experimental device electrical-optical characterization of long wavelength GaInNAs edge-emitting laser diode. The theoretical analysis demonstrates that a high quality GaInNAs active region and device design are devised, where high material gain near 1.3 μm and optimal optical mode confinement are calculated. Experimentally, room temperature lasing emission around 1.27 μm with threshold current densities of 670-810 A/cm ² is obtained from the fabricated broad area GaInNAs edge-emitting laser grown by molecular beam epitaxy technique.

Original language	English (US)
Pages (from-to)	155-159
Number of pages	5
Journal	Laser Physics
Volume	22
Issue number	1
DOIs	https://doi.org/10.1134/S1054660X1201001X
State	Published - Jan 2012
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Instrumentation
Condensed Matter Physics
Industrial and Manufacturing Engineering

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10.1134/S1054660X1201001X

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@article{cec208dca6b94a328120613bcaddd7a6,

title = "Long-wavelength MBE grown GaInNAs quantum well laser emitting at 1270 nm",

abstract = "In this paper, we report on comprehensive theoretical optical properties analysis and experimental device electrical-optical characterization of long wavelength GaInNAs edge-emitting laser diode. The theoretical analysis demonstrates that a high quality GaInNAs active region and device design are devised, where high material gain near 1.3 μm and optimal optical mode confinement are calculated. Experimentally, room temperature lasing emission around 1.27 μm with threshold current densities of 670-810 A/cm 2 is obtained from the fabricated broad area GaInNAs edge-emitting laser grown by molecular beam epitaxy technique.",

author = "Alias, {M. S.} and F. Maskuriy and Mitani, {S. M.}",

year = "2012",

month = jan,

doi = "10.1134/S1054660X1201001X",

language = "English (US)",

volume = "22",

pages = "155--159",

journal = "Laser Physics",

issn = "1054-660X",

publisher = "Institute of Physics Publishing",

number = "1",

}

TY - JOUR

T1 - Long-wavelength MBE grown GaInNAs quantum well laser emitting at 1270 nm

AU - Alias, M. S.

AU - Maskuriy, F.

AU - Mitani, S. M.

PY - 2012/1

Y1 - 2012/1

N2 - In this paper, we report on comprehensive theoretical optical properties analysis and experimental device electrical-optical characterization of long wavelength GaInNAs edge-emitting laser diode. The theoretical analysis demonstrates that a high quality GaInNAs active region and device design are devised, where high material gain near 1.3 μm and optimal optical mode confinement are calculated. Experimentally, room temperature lasing emission around 1.27 μm with threshold current densities of 670-810 A/cm 2 is obtained from the fabricated broad area GaInNAs edge-emitting laser grown by molecular beam epitaxy technique.

AB - In this paper, we report on comprehensive theoretical optical properties analysis and experimental device electrical-optical characterization of long wavelength GaInNAs edge-emitting laser diode. The theoretical analysis demonstrates that a high quality GaInNAs active region and device design are devised, where high material gain near 1.3 μm and optimal optical mode confinement are calculated. Experimentally, room temperature lasing emission around 1.27 μm with threshold current densities of 670-810 A/cm 2 is obtained from the fabricated broad area GaInNAs edge-emitting laser grown by molecular beam epitaxy technique.

UR - http://www.scopus.com/inward/record.url?scp=84856605397&partnerID=8YFLogxK

U2 - 10.1134/S1054660X1201001X

DO - 10.1134/S1054660X1201001X

M3 - Article

AN - SCOPUS:84856605397

SN - 1054-660X

VL - 22

SP - 155

EP - 159

JO - Laser Physics

JF - Laser Physics

IS - 1

ER -

Long-wavelength MBE grown GaInNAs quantum well laser emitting at 1270 nm

Abstract

ASJC Scopus subject areas

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