Abstract
Structural analysis of the submicron area of an InGaN thin film was conducted using transmission electron microscopy. By obtaining the selected area diffraction patterns of c-plane InGaN/GaN and a-plane InGaN/GaN films, the local lattice parameters were measured. Coherent growths were checked at the respective samples for different growth orientations, and the In concentration of the InGaN layer was also measured. Furthermore, there is a slight tilt in the growth direction between the GaN and InGaN layers in the a-plane InGaN/GaN film.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1738-1741 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 3 |
| DOIs | |
| State | Published - 2006 |
| Externally published | Yes |
| Event | 6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany Duration: Aug 28 2005 → Sep 2 2005 |
ASJC Scopus subject areas
- Condensed Matter Physics