Local heat energy transport analyses in gallium-indium-nitride/gallium nitride Heterostructure by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams

Shungo Okamoto; Naomichi Saito; Kotaro Ito; Bei Ma; Ken Morita; Daisuke Iida; Kazuhiro Ohkawa; Yoshihiro Ishitani

doi:10.1115/IPACK2020-2570

Local heat energy transport analyses in gallium-indium-nitride/gallium nitride Heterostructure by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams

Shungo Okamoto, Naomichi Saito, Kotaro Ito, Bei Ma, Ken Morita, Daisuke Iida, Kazuhiro Ohkawa, Yoshihiro Ishitani

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Local heat transport in two GaxIn1-xN/GaN-heterostructures on sapphire substrates is investigated by microscopic Raman imaging using two lasers of 532 nm (Raman observation) and 325 nm (heat generation and Raman observation), which enables the separation of heat generation and Raman observation positions. It is found that E2(high) and A1(LO) modes of the Ga0.84In0.16N layer exhibit mutually different characteristics, which indicates the analysis of the occupation of the A1(LO) mode is available. E2(high) mode of the GaN layer observed by the 532-nm laser reveals that the transport of the heat energy generated in the Ga0.84In0.16N layer to the GaN under layer is blocked in the high-density area of misfit dislocation in the vicinity of the heterointerface.

Original language	English (US)
Title of host publication	ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems
Publisher	American Society of Mechanical Engineers
ISBN (Print)	9780791884041
DOIs	https://doi.org/10.1115/IPACK2020-2570
State	Published - Dec 11 2020

Bibliographical note

KAUST Repository Item: Exported on 2021-01-05
Acknowledged KAUST grant number(s): BAS/1/1676-01-01
Acknowledgements: This study was partly supported by the Grant-in-Aid for Scientific Research of the Japan Society for the Promotion of Science (16H06425 and 17H02772) and King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01)

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10.1115/IPACK2020-2570

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Okamoto, S., Saito, N., Ito, K., Ma, B., Morita, K., Iida, D., Ohkawa, K., & Ishitani, Y. (2020). Local heat energy transport analyses in gallium-indium-nitride/gallium nitride Heterostructure by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams. In ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems American Society of Mechanical Engineers. https://doi.org/10.1115/IPACK2020-2570

Okamoto, Shungo ; Saito, Naomichi ; Ito, Kotaro et al. / Local heat energy transport analyses in gallium-indium-nitride/gallium nitride Heterostructure by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams. ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2020.

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title = "Local heat energy transport analyses in gallium-indium-nitride/gallium nitride Heterostructure by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams",

abstract = "Local heat transport in two GaxIn1-xN/GaN-heterostructures on sapphire substrates is investigated by microscopic Raman imaging using two lasers of 532 nm (Raman observation) and 325 nm (heat generation and Raman observation), which enables the separation of heat generation and Raman observation positions. It is found that E2(high) and A1(LO) modes of the Ga0.84In0.16N layer exhibit mutually different characteristics, which indicates the analysis of the occupation of the A1(LO) mode is available. E2(high) mode of the GaN layer observed by the 532-nm laser reveals that the transport of the heat energy generated in the Ga0.84In0.16N layer to the GaN under layer is blocked in the high-density area of misfit dislocation in the vicinity of the heterointerface.",

author = "Shungo Okamoto and Naomichi Saito and Kotaro Ito and Bei Ma and Ken Morita and Daisuke Iida and Kazuhiro Ohkawa and Yoshihiro Ishitani",

note = "KAUST Repository Item: Exported on 2021-01-05 Acknowledged KAUST grant number(s): BAS/1/1676-01-01 Acknowledgements: This study was partly supported by the Grant-in-Aid for Scientific Research of the Japan Society for the Promotion of Science (16H06425 and 17H02772) and King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01)",

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doi = "10.1115/IPACK2020-2570",

language = "English (US)",

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Okamoto, S, Saito, N, Ito, K, Ma, B, Morita, K, Iida, D , Ohkawa, K & Ishitani, Y 2020, Local heat energy transport analyses in gallium-indium-nitride/gallium nitride Heterostructure by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams. in ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers. https://doi.org/10.1115/IPACK2020-2570

Local heat energy transport analyses in gallium-indium-nitride/gallium nitride Heterostructure by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams. / Okamoto, Shungo; Saito, Naomichi; Ito, Kotaro et al.
ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2020.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Local heat energy transport analyses in gallium-indium-nitride/gallium nitride Heterostructure by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams

AU - Okamoto, Shungo

AU - Saito, Naomichi

AU - Ito, Kotaro

AU - Ma, Bei

AU - Morita, Ken

AU - Iida, Daisuke

AU - Ohkawa, Kazuhiro

AU - Ishitani, Yoshihiro

N1 - KAUST Repository Item: Exported on 2021-01-05 Acknowledged KAUST grant number(s): BAS/1/1676-01-01 Acknowledgements: This study was partly supported by the Grant-in-Aid for Scientific Research of the Japan Society for the Promotion of Science (16H06425 and 17H02772) and King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01)

PY - 2020/12/11

Y1 - 2020/12/11

N2 - Local heat transport in two GaxIn1-xN/GaN-heterostructures on sapphire substrates is investigated by microscopic Raman imaging using two lasers of 532 nm (Raman observation) and 325 nm (heat generation and Raman observation), which enables the separation of heat generation and Raman observation positions. It is found that E2(high) and A1(LO) modes of the Ga0.84In0.16N layer exhibit mutually different characteristics, which indicates the analysis of the occupation of the A1(LO) mode is available. E2(high) mode of the GaN layer observed by the 532-nm laser reveals that the transport of the heat energy generated in the Ga0.84In0.16N layer to the GaN under layer is blocked in the high-density area of misfit dislocation in the vicinity of the heterointerface.

AB - Local heat transport in two GaxIn1-xN/GaN-heterostructures on sapphire substrates is investigated by microscopic Raman imaging using two lasers of 532 nm (Raman observation) and 325 nm (heat generation and Raman observation), which enables the separation of heat generation and Raman observation positions. It is found that E2(high) and A1(LO) modes of the Ga0.84In0.16N layer exhibit mutually different characteristics, which indicates the analysis of the occupation of the A1(LO) mode is available. E2(high) mode of the GaN layer observed by the 532-nm laser reveals that the transport of the heat energy generated in the Ga0.84In0.16N layer to the GaN under layer is blocked in the high-density area of misfit dislocation in the vicinity of the heterointerface.

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U2 - 10.1115/IPACK2020-2570

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M3 - Conference contribution

SN - 9780791884041

BT - ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems

PB - American Society of Mechanical Engineers

ER -

Okamoto S, Saito N, Ito K, Ma B, Morita K, Iida D et al. Local heat energy transport analyses in gallium-indium-nitride/gallium nitride Heterostructure by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams. In ASME 2020 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers. 2020 doi: 10.1115/IPACK2020-2570

Local heat energy transport analyses in gallium-indium-nitride/gallium nitride Heterostructure by microscopic Raman imaging exploiting simultaneous irradiation of two laser beams

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