Light-induced degradation of very low resistivity multi-crystalline silicon solar cells

Stefaan De Wolf; P. Choulat; J. Szlufcik; I. Périchaud; S. Martinuzzi; C. Häßler; W. Krumbe

doi:10.1109/PVSC.2000.915751

Light-induced degradation of very low resistivity multi-crystalline silicon solar cells

Stefaan De Wolf, P. Choulat, J. Szlufcik, I. Périchaud, S. Martinuzzi, C. Häßler, W. Krumbe

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

An J_Sc degradation under illumination has been measured for finished solar cells processed from multicrystalline B-doped Si-substrates with resistivities below 0.1 ßcm. This phenomenon has been studied as function of the different applied processing steps and as function of the boron- and oxygen-concentration of the substrate. The observed effect is likely related to a reversible formation of boron-oxygen complexes, introducing traps in the bandgap. This behaviour is similar to what has been reported in literature for carrier lifetime instabilities of 1Ωcm Cz-Si. The degradation was found to be fully reversible by a low-temperature anneal at about 200°C, provided that the degradation causing defects have not been passivated by hydrogénation.

Original language	English (US)
Title of host publication	Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	53-56
Number of pages	4
ISBN (Electronic)	0780357728
DOIs	https://doi.org/10.1109/PVSC.2000.915751
State	Published - 2000
Externally published	Yes
Event	28th IEEE Photovoltaic Specialists Conference, PVSC 2000 - Anchorage, United States Duration: Sep 15 2000 → Sep 22 2000

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2000-January
ISSN (Print)	0160-8371

Other

Other	28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Country/Territory	United States
City	Anchorage
Period	09/15/00 → 09/22/00

Bibliographical note

Publisher Copyright:
© 2000 IEEE.

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2000.915751

Cite this

De Wolf, S., Choulat, P., Szlufcik, J., Périchaud, I., Martinuzzi, S., Häßler, C., & Krumbe, W. (2000). Light-induced degradation of very low resistivity multi-crystalline silicon solar cells. In Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000 (pp. 53-56). Article 915751 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2000-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2000.915751

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title = "Light-induced degradation of very low resistivity multi-crystalline silicon solar cells",

abstract = "An JSc degradation under illumination has been measured for finished solar cells processed from multicrystalline B-doped Si-substrates with resistivities below 0.1 {\ss}cm. This phenomenon has been studied as function of the different applied processing steps and as function of the boron- and oxygen-concentration of the substrate. The observed effect is likely related to a reversible formation of boron-oxygen complexes, introducing traps in the bandgap. This behaviour is similar to what has been reported in literature for carrier lifetime instabilities of 1Ωcm Cz-Si. The degradation was found to be fully reversible by a low-temperature anneal at about 200°C, provided that the degradation causing defects have not been passivated by hydrog{\'e}nation.",

author = "{De Wolf}, Stefaan and P. Choulat and J. Szlufcik and I. P{\'e}richaud and S. Martinuzzi and C. H{\"a}{\ss}ler and W. Krumbe",

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year = "2000",

doi = "10.1109/PVSC.2000.915751",

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series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

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De Wolf, S, Choulat, P, Szlufcik, J, Périchaud, I, Martinuzzi, S, Häßler, C & Krumbe, W 2000, Light-induced degradation of very low resistivity multi-crystalline silicon solar cells. in Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000., 915751, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2000-January, Institute of Electrical and Electronics Engineers Inc., pp. 53-56, 28th IEEE Photovoltaic Specialists Conference, PVSC 2000, Anchorage, United States, 09/15/00. https://doi.org/10.1109/PVSC.2000.915751

Light-induced degradation of very low resistivity multi-crystalline silicon solar cells. / De Wolf, Stefaan; Choulat, P.; Szlufcik, J. et al.
Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000. Institute of Electrical and Electronics Engineers Inc., 2000. p. 53-56 915751 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2000-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - De Wolf, Stefaan

AU - Choulat, P.

AU - Szlufcik, J.

AU - Périchaud, I.

AU - Martinuzzi, S.

AU - Häßler, C.

AU - Krumbe, W.

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AB - An JSc degradation under illumination has been measured for finished solar cells processed from multicrystalline B-doped Si-substrates with resistivities below 0.1 ßcm. This phenomenon has been studied as function of the different applied processing steps and as function of the boron- and oxygen-concentration of the substrate. The observed effect is likely related to a reversible formation of boron-oxygen complexes, introducing traps in the bandgap. This behaviour is similar to what has been reported in literature for carrier lifetime instabilities of 1Ωcm Cz-Si. The degradation was found to be fully reversible by a low-temperature anneal at about 200°C, provided that the degradation causing defects have not been passivated by hydrogénation.

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De Wolf S, Choulat P, Szlufcik J, Périchaud I, Martinuzzi S, Häßler C et al. Light-induced degradation of very low resistivity multi-crystalline silicon solar cells. In Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000. Institute of Electrical and Electronics Engineers Inc. 2000. p. 53-56. 915751. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2000.915751

Light-induced degradation of very low resistivity multi-crystalline silicon solar cells

Abstract

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