Light-emitting β-Fe(SiXGe1-x)2 nanodots on Si0.8Ge0.2 substrate

Y. L. Chueh*, L. J. Chou, S. L. Cheng, J. H. He, W. W. Wu, L. J. Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Uniformly distributed dome-shaped β-Fe(SixGe 1-x)2 nanodots synthesized on Si0.8Ge 0.2 are reported. A photoluminescence peak at 0.82 eV (1510 nm) is observed at 20 K for β-Fe(SixGe1-x)2 nanodots grown epitaxial on Si0.8Ge0.2 substrate.

Original languageEnglish (US)
Pages (from-to)G137-G139
JournalElectrochemical and Solid-State Letters
Issue number6
StatePublished - 2005
Externally publishedYes

ASJC Scopus subject areas

  • General Chemical Engineering
  • General Materials Science
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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