Light emission tuning of In0.5Ga0.5As/In0.05Ga0.95As quantum dots by a two-dimensional photonic crystal

V. Vitale; M. T. Todaro; T. Stomeo; E. Margapoti; A. Passaseo; M. De Giorgi; M. De Vittorio; R. Cingolani; F. Romanato; P. Candeloro; E. Di Fabrizio

doi:10.1016/S0167-9317(03)00144-8

Light emission tuning of In_0.5Ga_0.5As/In_0.05Ga_0.95As quantum dots by a two-dimensional photonic crystal

V. Vitale^*, M. T. Todaro, T. Stomeo, E. Margapoti, A. Passaseo, M. De Giorgi, M. De Vittorio, R. Cingolani, F. Romanato, P. Candeloro, E. Di Fabrizio

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We report on the fabrication and characterization of a two-dimensional photonic crystal (PC) embedding two InGaAs quantum dot layers as active light emitters. Light confinement was provided by both a PC GaAs slab waveguide and a distributed Bragg reflector (DBR) located at the bottom of the guiding layer. The micro-photoluminescence characterization shows that the photonic crystal can be used to alter the quantum dot emission by modifying the photonic density of states.

Original language	English (US)
Pages (from-to)	832-837
Number of pages	6
Journal	Microelectronic Engineering
Volume	67-68
DOIs	https://doi.org/10.1016/S0167-9317(03)00144-8
State	Published - Jun 2003
Externally published	Yes
Event	Proceedings of the 28th International Conference on MNE - Lugano, Switzerland Duration: Sep 16 2002 → Sep 19 2002

Keywords

Nanotechnology
Photonic crystals
Photonic devices
Quantum dots

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/S0167-9317(03)00144-8

Cite this

@article{246f950b56ec4501a6ff80f9405bcf6f,

title = "Light emission tuning of In0.5Ga0.5As/In0.05Ga0.95As quantum dots by a two-dimensional photonic crystal",

abstract = "We report on the fabrication and characterization of a two-dimensional photonic crystal (PC) embedding two InGaAs quantum dot layers as active light emitters. Light confinement was provided by both a PC GaAs slab waveguide and a distributed Bragg reflector (DBR) located at the bottom of the guiding layer. The micro-photoluminescence characterization shows that the photonic crystal can be used to alter the quantum dot emission by modifying the photonic density of states.",

keywords = "Nanotechnology, Photonic crystals, Photonic devices, Quantum dots",

author = "V. Vitale and Todaro, {M. T.} and T. Stomeo and E. Margapoti and A. Passaseo and {De Giorgi}, M. and {De Vittorio}, M. and R. Cingolani and F. Romanato and P. Candeloro and {Di Fabrizio}, E.",

year = "2003",

month = jun,

doi = "10.1016/S0167-9317(03)00144-8",

language = "English (US)",

volume = "67-68",

pages = "832--837",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "ELSEVIER SCIENCE BV",

note = "Proceedings of the 28th International Conference on MNE ; Conference date: 16-09-2002 Through 19-09-2002",

}

TY - JOUR

T1 - Light emission tuning of In0.5Ga0.5As/In0.05Ga0.95As quantum dots by a two-dimensional photonic crystal

AU - Vitale, V.

AU - Todaro, M. T.

AU - Stomeo, T.

AU - Margapoti, E.

AU - Passaseo, A.

AU - De Giorgi, M.

AU - De Vittorio, M.

AU - Cingolani, R.

AU - Romanato, F.

AU - Candeloro, P.

AU - Di Fabrizio, E.

PY - 2003/6

Y1 - 2003/6

N2 - We report on the fabrication and characterization of a two-dimensional photonic crystal (PC) embedding two InGaAs quantum dot layers as active light emitters. Light confinement was provided by both a PC GaAs slab waveguide and a distributed Bragg reflector (DBR) located at the bottom of the guiding layer. The micro-photoluminescence characterization shows that the photonic crystal can be used to alter the quantum dot emission by modifying the photonic density of states.

AB - We report on the fabrication and characterization of a two-dimensional photonic crystal (PC) embedding two InGaAs quantum dot layers as active light emitters. Light confinement was provided by both a PC GaAs slab waveguide and a distributed Bragg reflector (DBR) located at the bottom of the guiding layer. The micro-photoluminescence characterization shows that the photonic crystal can be used to alter the quantum dot emission by modifying the photonic density of states.

KW - Nanotechnology

KW - Photonic crystals

KW - Photonic devices

KW - Quantum dots

UR - http://www.scopus.com/inward/record.url?scp=0038696442&partnerID=8YFLogxK

U2 - 10.1016/S0167-9317(03)00144-8

DO - 10.1016/S0167-9317(03)00144-8

M3 - Conference article

AN - SCOPUS:0038696442

SN - 0167-9317

VL - 67-68

SP - 832

EP - 837

JO - Microelectronic Engineering

JF - Microelectronic Engineering

T2 - Proceedings of the 28th International Conference on MNE

Y2 - 16 September 2002 through 19 September 2002

ER -