Li-doped IrO2/Si heterojunctions for CMOS-integrated optoelectronics

Abdullah Alquwayzani; Laurentiu Braic; Mohamed N. Hedhili; Tien Khee Ng; Nasir Alfaraj; Boon S. Ooi

doi:10.1117/12.3001163

Li-doped IrO₂/Si heterojunctions for CMOS-integrated optoelectronics

Abdullah Alquwayzani, Laurentiu Braic, Mohamed N. Hedhili, Tien Khee Ng, Nasir Alfaraj^*, Boon S. Ooi^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The heterojunction of polycrystalline Li-doped IrO₂, grown by pulsed laser deposition, and (100)-oriented Si is investigated to develop CMOS-integrated compact optoelectronics. The grown films exhibited p-type conductivity with a bandgap value of around 3.15 eV. Energy-dispersive X-ray spectroscopy mapping confirmed the films’ composition. The hetero-integration of wide-bandgap metal oxides on Si extends the scalability of CMOS-compatible optoelectronics and power electronics, paving the way for enhanced optoelectronic processes and miniaturized photonic circuits.

Original language	English (US)
Title of host publication	Oxide-Based Materials and Devices XV
Editors	David J. Rogers, Ferechteh H. Teherani
Publisher	SPIE
ISBN (Electronic)	9781510670341
DOIs	https://doi.org/10.1117/12.3001163
State	Published - 2024
Event	Oxide-Based Materials and Devices XV 2024 - San Francisco, United States Duration: Jan 29 2024 → Feb 1 2024

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	12887
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Oxide-Based Materials and Devices XV 2024
Country/Territory	United States
City	San Francisco
Period	01/29/24 → 02/1/24

Bibliographical note

Publisher Copyright:
© 2024 SPIE.

Keywords

CMOS
integrated optoelectronics
Iridium oxide (IrO)
oxide semiconductors
power electronics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.3001163

Cite this

Alquwayzani, A., Braic, L., Hedhili, M. N., Ng, T. K., Alfaraj, N., & Ooi, B. S. (2024). Li-doped IrO₂/Si heterojunctions for CMOS-integrated optoelectronics. In D. J. Rogers, & F. H. Teherani (Eds.), Oxide-Based Materials and Devices XV Article 1288702 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12887). SPIE. https://doi.org/10.1117/12.3001163

@inproceedings{4cca3ae734464119a383d718acd98a54,

title = "Li-doped IrO2/Si heterojunctions for CMOS-integrated optoelectronics",

abstract = "The heterojunction of polycrystalline Li-doped IrO2, grown by pulsed laser deposition, and (100)-oriented Si is investigated to develop CMOS-integrated compact optoelectronics. The grown films exhibited p-type conductivity with a bandgap value of around 3.15 eV. Energy-dispersive X-ray spectroscopy mapping confirmed the films{\textquoteright} composition. The hetero-integration of wide-bandgap metal oxides on Si extends the scalability of CMOS-compatible optoelectronics and power electronics, paving the way for enhanced optoelectronic processes and miniaturized photonic circuits.",

keywords = "CMOS, integrated optoelectronics, Iridium oxide (IrO), oxide semiconductors, power electronics",

author = "Abdullah Alquwayzani and Laurentiu Braic and Hedhili, {Mohamed N.} and Ng, {Tien Khee} and Nasir Alfaraj and Ooi, {Boon S.}",

note = "Publisher Copyright: {\textcopyright} 2024 SPIE.; Oxide-Based Materials and Devices XV 2024 ; Conference date: 29-01-2024 Through 01-02-2024",

year = "2024",

doi = "10.1117/12.3001163",

language = "English (US)",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Rogers, {David J.} and Teherani, {Ferechteh H.}",

booktitle = "Oxide-Based Materials and Devices XV",

address = "United States",

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Alquwayzani, A , Braic, L , Hedhili, MN , Ng, TK , Alfaraj, N & Ooi, BS 2024, Li-doped IrO₂/Si heterojunctions for CMOS-integrated optoelectronics. in DJ Rogers & FH Teherani (eds), Oxide-Based Materials and Devices XV., 1288702, Proceedings of SPIE - The International Society for Optical Engineering, vol. 12887, SPIE, Oxide-Based Materials and Devices XV 2024, San Francisco, United States, 01/29/24. https://doi.org/10.1117/12.3001163

Li-doped IrO₂/Si heterojunctions for CMOS-integrated optoelectronics. / Alquwayzani, Abdullah ; Braic, Laurentiu ; Hedhili, Mohamed N. et al.
Oxide-Based Materials and Devices XV. ed. / David J. Rogers; Ferechteh H. Teherani. SPIE, 2024. 1288702 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12887).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Alquwayzani, Abdullah

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AU - Hedhili, Mohamed N.

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AU - Alfaraj, Nasir

AU - Ooi, Boon S.

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AB - The heterojunction of polycrystalline Li-doped IrO2, grown by pulsed laser deposition, and (100)-oriented Si is investigated to develop CMOS-integrated compact optoelectronics. The grown films exhibited p-type conductivity with a bandgap value of around 3.15 eV. Energy-dispersive X-ray spectroscopy mapping confirmed the films’ composition. The hetero-integration of wide-bandgap metal oxides on Si extends the scalability of CMOS-compatible optoelectronics and power electronics, paving the way for enhanced optoelectronic processes and miniaturized photonic circuits.

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KW - integrated optoelectronics

KW - Iridium oxide (IrO)

KW - oxide semiconductors

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