Leakage current analysis of high power AlGaInP lasers

Yun Xu; Yuzhang Li; Guofeng Song; Qiaoqiang Gan; Guohua Yang; Yulian Cao; Qing Cao; Liang Guo; Lianghui Chen

Leakage current analysis of high power AlGaInP lasers

Yun Xu, Yuzhang Li, Guofeng Song, Qiaoqiang Gan, Guohua Yang, Yulian Cao, Qing Cao, Liang Guo, Lianghui Chen

Research output: Contribution to journal › Article › peer-review

Abstract

In AlGalnP/GalnP multi-quantum well (MQW) lasers, the injected electrons will surmount the potential barrier between the active layer's quasi-Fermi level and the conduction band of the p-cladding layer in the high injection or high temperature condition, resulting in the leakage current, which seriously deteriorate the output parameters of laser diodes. In this letter, the effective electron potential was estimated by testing the change of threshold current and differential quantum efficiency with temperature, and was compared with theoretical simulation results. Consequently, the influence of the p-cladding layer's concentration on the effective potential height was discussed.

Original language	English (US)
Pages (from-to)	299-303
Number of pages	5
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	27
Issue number	SUPPL.
State	Published - Dec 1 2006
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2022-09-13

ASJC Scopus subject areas

Materials Chemistry
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

Cite this

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title = "Leakage current analysis of high power AlGaInP lasers",

abstract = "In AlGalnP/GalnP multi-quantum well (MQW) lasers, the injected electrons will surmount the potential barrier between the active layer's quasi-Fermi level and the conduction band of the p-cladding layer in the high injection or high temperature condition, resulting in the leakage current, which seriously deteriorate the output parameters of laser diodes. In this letter, the effective electron potential was estimated by testing the change of threshold current and differential quantum efficiency with temperature, and was compared with theoretical simulation results. Consequently, the influence of the p-cladding layer's concentration on the effective potential height was discussed.",

author = "Yun Xu and Yuzhang Li and Guofeng Song and Qiaoqiang Gan and Guohua Yang and Yulian Cao and Qing Cao and Liang Guo and Lianghui Chen",

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year = "2006",

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language = "English (US)",

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pages = "299--303",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

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TY - JOUR

T1 - Leakage current analysis of high power AlGaInP lasers

AU - Xu, Yun

AU - Li, Yuzhang

AU - Song, Guofeng

AU - Gan, Qiaoqiang

AU - Yang, Guohua

AU - Cao, Yulian

AU - Cao, Qing

AU - Guo, Liang

AU - Chen, Lianghui

N1 - Generated from Scopus record by KAUST IRTS on 2022-09-13

PY - 2006/12/1

Y1 - 2006/12/1

N2 - In AlGalnP/GalnP multi-quantum well (MQW) lasers, the injected electrons will surmount the potential barrier between the active layer's quasi-Fermi level and the conduction band of the p-cladding layer in the high injection or high temperature condition, resulting in the leakage current, which seriously deteriorate the output parameters of laser diodes. In this letter, the effective electron potential was estimated by testing the change of threshold current and differential quantum efficiency with temperature, and was compared with theoretical simulation results. Consequently, the influence of the p-cladding layer's concentration on the effective potential height was discussed.

AB - In AlGalnP/GalnP multi-quantum well (MQW) lasers, the injected electrons will surmount the potential barrier between the active layer's quasi-Fermi level and the conduction band of the p-cladding layer in the high injection or high temperature condition, resulting in the leakage current, which seriously deteriorate the output parameters of laser diodes. In this letter, the effective electron potential was estimated by testing the change of threshold current and differential quantum efficiency with temperature, and was compared with theoretical simulation results. Consequently, the influence of the p-cladding layer's concentration on the effective potential height was discussed.

UR - http://www.scopus.com/inward/record.url?scp=33847781614&partnerID=8YFLogxK

M3 - Article

SN - 0253-4177

VL - 27

SP - 299

EP - 303

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - SUPPL.

ER -

Leakage current analysis of high power AlGaInP lasers

Abstract

Bibliographical note

ASJC Scopus subject areas

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