Leakage and reliability characteristics of lead zirconate titanate thin-film capacitors

Husam N. Al-Shareef; Duane Dimos

doi:10.1111/j.1151-2916.1997.tb03240.x

Leakage and reliability characteristics of lead zirconate titanate thin-film capacitors

Husam N. Al-Shareef^*, Duane Dimos

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

Resistance degradation in lead zirconate titanate (Pb-(Zr,Ti)O₃, PZT) thin-film capacitors has been studied as a function of applied voltage, temperature, and film composition. The mean time-to-failure (lifetime, or t_∫) of the capacitors shows a power-law dependence on voltage of the form t_∫ ∝ V^-n (n = 4-5). The capacitor lifetime also exhibits a temperature dependence of the form t_∫ ∝ exp[E_a/(kT)], with an activation energy of 0.6-1.0 eV. The steady-state leakage current in these samples seems to be bulk controlled. The voltage V, temperature T, and polarity dependence of the leakage current collectively suggest a leakage-current mechanism that is most similar to a Frenkel-Poole process. The t_∫ value and the leakage current of niobium-doped PZT films are superior to those of undoped PZT films. This result can be explained on the basis of the point-defect chemistry of the PZT system. Finally, the results indicate that the niobium-doped PZT films meet essential t_∫ requirements for decoupling-capacitor applications.

Original language	English (US)
Pages (from-to)	3127-3132
Number of pages	6
Journal	Journal of the American Ceramic Society
Volume	80
Issue number	12
DOIs	https://doi.org/10.1111/j.1151-2916.1997.tb03240.x
State	Published - Dec 1997
Externally published	Yes

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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10.1111/j.1151-2916.1997.tb03240.x

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title = "Leakage and reliability characteristics of lead zirconate titanate thin-film capacitors",

abstract = "Resistance degradation in lead zirconate titanate (Pb-(Zr,Ti)O3, PZT) thin-film capacitors has been studied as a function of applied voltage, temperature, and film composition. The mean time-to-failure (lifetime, or t∫) of the capacitors shows a power-law dependence on voltage of the form t∫ ∝ V-n (n = 4-5). The capacitor lifetime also exhibits a temperature dependence of the form t∫ ∝ exp[Ea/(kT)], with an activation energy of 0.6-1.0 eV. The steady-state leakage current in these samples seems to be bulk controlled. The voltage V, temperature T, and polarity dependence of the leakage current collectively suggest a leakage-current mechanism that is most similar to a Frenkel-Poole process. The t∫ value and the leakage current of niobium-doped PZT films are superior to those of undoped PZT films. This result can be explained on the basis of the point-defect chemistry of the PZT system. Finally, the results indicate that the niobium-doped PZT films meet essential t∫ requirements for decoupling-capacitor applications.",

author = "Al-Shareef, {Husam N.} and Duane Dimos",

year = "1997",

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AU - Al-Shareef, Husam N.

AU - Dimos, Duane

PY - 1997/12

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N2 - Resistance degradation in lead zirconate titanate (Pb-(Zr,Ti)O3, PZT) thin-film capacitors has been studied as a function of applied voltage, temperature, and film composition. The mean time-to-failure (lifetime, or t∫) of the capacitors shows a power-law dependence on voltage of the form t∫ ∝ V-n (n = 4-5). The capacitor lifetime also exhibits a temperature dependence of the form t∫ ∝ exp[Ea/(kT)], with an activation energy of 0.6-1.0 eV. The steady-state leakage current in these samples seems to be bulk controlled. The voltage V, temperature T, and polarity dependence of the leakage current collectively suggest a leakage-current mechanism that is most similar to a Frenkel-Poole process. The t∫ value and the leakage current of niobium-doped PZT films are superior to those of undoped PZT films. This result can be explained on the basis of the point-defect chemistry of the PZT system. Finally, the results indicate that the niobium-doped PZT films meet essential t∫ requirements for decoupling-capacitor applications.

AB - Resistance degradation in lead zirconate titanate (Pb-(Zr,Ti)O3, PZT) thin-film capacitors has been studied as a function of applied voltage, temperature, and film composition. The mean time-to-failure (lifetime, or t∫) of the capacitors shows a power-law dependence on voltage of the form t∫ ∝ V-n (n = 4-5). The capacitor lifetime also exhibits a temperature dependence of the form t∫ ∝ exp[Ea/(kT)], with an activation energy of 0.6-1.0 eV. The steady-state leakage current in these samples seems to be bulk controlled. The voltage V, temperature T, and polarity dependence of the leakage current collectively suggest a leakage-current mechanism that is most similar to a Frenkel-Poole process. The t∫ value and the leakage current of niobium-doped PZT films are superior to those of undoped PZT films. This result can be explained on the basis of the point-defect chemistry of the PZT system. Finally, the results indicate that the niobium-doped PZT films meet essential t∫ requirements for decoupling-capacitor applications.

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Leakage and reliability characteristics of lead zirconate titanate thin-film capacitors

Abstract

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