Abstract
The leakage behavior of pb(Zr,Ti)O3 PZT and (Ba,Sr)TiO3 (BST) thin films has been studied. The leakage behavior is dependent upon the bottom electrode. PZT films on RuO2 bottom electrodes display a large leakage, predominantly ohmic in behavior, which we have shown to be PZT microstructure-controlled. The leakage of PZT and BST films on Pt display Schottky emission characteristics which is controlled by the film/electrode interface. In the case of PZT films, we have shown that several methods can be utilized to successfully lower the RUO2/PZT/RUO2 system leakage, while retaining the long term performance. These methods include pre-annealing of RUO2 bottom electrode prior to PZT film deposition; addition of buffer layer between RUO2 and PZT film; and PZT film growth via insituion.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 291-306 |
| Number of pages | 16 |
| Journal | Integrated Ferroelectrics |
| Volume | 7 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - Feb 1995 |
| Externally published | Yes |
Bibliographical note
Funding Information:This work was supported by ARPA under contract number N00014-93-1-0591 and ATM 93-734-05 . The authors thank ATM for providing BST thin films; and Professors J. F. Scott, R Waser and S. Dey for useful discussions.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Control and Systems Engineering
- Ceramics and Composites
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry