TY - JOUR
T1 - Layered bismuth selenide utilized as hole transporting layer for highly stable organic photovoltaics
AU - Yuan, Zhongcheng
AU - Wu, Zhongwei
AU - Bai, Sai
AU - Cui, Wei
AU - Liu, Jie
AU - Song, Tao
AU - Sun, Baoquan
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: National Natural Science Foundation of China[61176057, 91123005, 61211130358]
PY - 2015/11
Y1 - 2015/11
N2 - Abstract Layered bismuth selenide (L-Bi2Se3) nanoplates were implemented as hole transporting layers (HTLs) for inverted organic solar cells. Device based on L-Bi2Se3 showed increasing power conversion efficiency (PCE) during ambient condition storage process. A PCE of 4.37% was finally obtained after 5 days storage, which outperformed the ones with evaporated-MoO3 using poly(3-hexylthiophene) (P3HT) as donor material and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) as acceptor. The improved device efficiency can be attributed to the high conductivity and increasing work function of L-Bi2Se3. The work function of L-Bi2Se3 increased with the storage time in ambient condition due to the oxygen atom doping. Ultraviolet photoelectron spectroscopy and high resolution X-ray photoelectron spectroscopy were conducted to verify the increased work function, which originated from the p-type doping process. The device based on L-Bi2Se3 exhibited excellent stability in ambient condition up to 4 months, which was much improved compared to the device based on traditional HTLs. © 2015 Elsevier B.V.
AB - Abstract Layered bismuth selenide (L-Bi2Se3) nanoplates were implemented as hole transporting layers (HTLs) for inverted organic solar cells. Device based on L-Bi2Se3 showed increasing power conversion efficiency (PCE) during ambient condition storage process. A PCE of 4.37% was finally obtained after 5 days storage, which outperformed the ones with evaporated-MoO3 using poly(3-hexylthiophene) (P3HT) as donor material and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) as acceptor. The improved device efficiency can be attributed to the high conductivity and increasing work function of L-Bi2Se3. The work function of L-Bi2Se3 increased with the storage time in ambient condition due to the oxygen atom doping. Ultraviolet photoelectron spectroscopy and high resolution X-ray photoelectron spectroscopy were conducted to verify the increased work function, which originated from the p-type doping process. The device based on L-Bi2Se3 exhibited excellent stability in ambient condition up to 4 months, which was much improved compared to the device based on traditional HTLs. © 2015 Elsevier B.V.
UR - http://hdl.handle.net/10754/594082
UR - https://linkinghub.elsevier.com/retrieve/pii/S1566119915300264
UR - http://www.scopus.com/inward/record.url?scp=84938796433&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2015.07.005
DO - 10.1016/j.orgel.2015.07.005
M3 - Article
SN - 1566-1199
VL - 26
SP - 327
EP - 333
JO - Organic Electronics
JF - Organic Electronics
ER -