Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

K. Lorenz, E. Alves, Iman S. Roqan, K. P. O’Donnell, A. Nishikawa, Y. Fujiwara, M. Boćkowski

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Fingerprint

Dive into the research topics of 'Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy'. Together they form a unique fingerprint.

Engineering

Keyphrases

Material Science