Lateral IMPATT diodes in standard CMOS technology

Talal Al-Attar*, Michael D. Mulligan, Thomas H. Lee

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

17 Scopus citations


We investigate the use of a lateral IMPATT diode built in 0.25μm CMOS technology as a high frequency power source. These diodes are monolithically integrated in coplanar waveguides and characterized by S-parameter measurements from 40 MHz to 110 GHz. These measurements show excellent agreement with predictions of theoretical models. To our knowledge, this is the first such structure built in a standard CMOS technology.

Original languageEnglish (US)
Pages (from-to)459-462
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
StatePublished - 2004
Externally publishedYes
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: Dec 13 2004Dec 15 2004

Bibliographical note

Funding Information:
The authors would like to thank Robert Bosch Corporation for financially supporting part of this work, National Semiconductor for fabricating the diodes, and Anritsu for providing access to the 110 GHz VNA.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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