Laser lift-off technique for freestanding GaN substrate using an in droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes

Daisuke Iida; Syunsuke Kawai; Nobuaki Ema; Takayoshi Tsuchiya; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki

doi:10.1063/1.4893757

Laser lift-off technique for freestanding GaN substrate using an in droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes

Daisuke Iida, Syunsuke Kawai, Nobuaki Ema, Takayoshi Tsuchiya, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We developed a laser lift-off technique for a freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN. A combination of an In droplet formed by thermal decomposition of GaInN during growth and a pulsed second-harmonic neodymium-doped yttrium aluminum garnet laser (λ = 532 nm) realized the lift-off GaN substrate. After laser lift-off of the GaN substrate, it was used to achieve 380 nm ultraviolet light-emitting diodes with light output enhanced 1.7-fold. In this way, the light extraction can be improved by removing the GaN substrate. © 2014 AIP Publishing LLC.

Original language	English (US)
Journal	Applied Physics Letters
Volume	105
Issue number	7
DOIs	https://doi.org/10.1063/1.4893757
State	Published - Aug 18 2014
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4893757

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title = "Laser lift-off technique for freestanding GaN substrate using an in droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes",

abstract = "We developed a laser lift-off technique for a freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN. A combination of an In droplet formed by thermal decomposition of GaInN during growth and a pulsed second-harmonic neodymium-doped yttrium aluminum garnet laser (λ = 532 nm) realized the lift-off GaN substrate. After laser lift-off of the GaN substrate, it was used to achieve 380 nm ultraviolet light-emitting diodes with light output enhanced 1.7-fold. In this way, the light extraction can be improved by removing the GaN substrate. {\textcopyright} 2014 AIP Publishing LLC.",

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doi = "10.1063/1.4893757",

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T1 - Laser lift-off technique for freestanding GaN substrate using an in droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes

AU - Iida, Daisuke

AU - Kawai, Syunsuke

AU - Ema, Nobuaki

AU - Tsuchiya, Takayoshi

AU - Iwaya, Motoaki

AU - Takeuchi, Tetsuya

AU - Kamiyama, Satoshi

AU - Akasaki, Isamu

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21

PY - 2014/8/18

Y1 - 2014/8/18

N2 - We developed a laser lift-off technique for a freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN. A combination of an In droplet formed by thermal decomposition of GaInN during growth and a pulsed second-harmonic neodymium-doped yttrium aluminum garnet laser (λ = 532 nm) realized the lift-off GaN substrate. After laser lift-off of the GaN substrate, it was used to achieve 380 nm ultraviolet light-emitting diodes with light output enhanced 1.7-fold. In this way, the light extraction can be improved by removing the GaN substrate. © 2014 AIP Publishing LLC.

AB - We developed a laser lift-off technique for a freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN. A combination of an In droplet formed by thermal decomposition of GaInN during growth and a pulsed second-harmonic neodymium-doped yttrium aluminum garnet laser (λ = 532 nm) realized the lift-off GaN substrate. After laser lift-off of the GaN substrate, it was used to achieve 380 nm ultraviolet light-emitting diodes with light output enhanced 1.7-fold. In this way, the light extraction can be improved by removing the GaN substrate. © 2014 AIP Publishing LLC.

UR - https://pubs.aip.org/aip/apl/article/133464

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DO - 10.1063/1.4893757

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VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Laser lift-off technique for freestanding GaN substrate using an in droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes

Abstract

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