Abstract
The effect of the laser fluence on high temperature thermoelectric properties of the La doped SrTiO3 (SLTO) thin films epitaxially grown on LaAlO3 〈100〉 substrates by pulsed laser deposition is clarified. It is shown that oxygen vacancies that influence the effective mass of carriers in SLTO films can be tuned by varying the laser energy. The highest power factor of 0.433 W K−1 m−1 has been achieved at 636 K for a filmdeposited using the highest laser fluence of 7 J cm−2 pulse−1.
Original language | English (US) |
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Pages (from-to) | 162106 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 16 |
DOIs | |
State | Published - Apr 18 2012 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)