Large-scale 2D electronics based on single-layer MoS2 grown by chemical vapor deposition

H. Wang; L. Yu; Y. H. Lee; W. Fang; A. Hsu; P. Herring; M. Chin; M. Dubey; L. J. Li; J. Kong; T. Palacios

doi:10.1109/IEDM.2012.6478980

Large-scale 2D electronics based on single-layer MoS₂ grown by chemical vapor deposition

H. Wang^*, L. Yu, Y. H. Lee, W. Fang, A. Hsu, P. Herring, M. Chin, M. Dubey, L. J. Li, J. Kong, T. Palacios

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

52 Scopus citations

Abstract

2D nanoelectronics based on single-layer MoS₂ offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS₂ and fabrication of integrated devices and circuits for the first time. Fundamental building blocks of digital electronics, such as inverters and NAND gates, are fabricated to demonstrate its capability for logic applications.

Original language	English (US)
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages	4.6.1-4.6.4
DOIs	https://doi.org/10.1109/IEDM.2012.6478980
State	Published - 2012
Externally published	Yes
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: Dec 10 2012 → Dec 13 2012

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	12/10/12 → 12/13/12

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2012.6478980

Cite this

Wang, H., Yu, L., Lee, Y. H., Fang, W., Hsu, A., Herring, P., Chin, M., Dubey, M., Li, L. J., Kong, J., & Palacios, T. (2012). Large-scale 2D electronics based on single-layer MoS₂ grown by chemical vapor deposition. In 2012 IEEE International Electron Devices Meeting, IEDM 2012 (pp. 4.6.1-4.6.4). Article 6478980 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2012.6478980

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title = "Large-scale 2D electronics based on single-layer MoS2 grown by chemical vapor deposition",

abstract = "2D nanoelectronics based on single-layer MoS2 offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS2 and fabrication of integrated devices and circuits for the first time. Fundamental building blocks of digital electronics, such as inverters and NAND gates, are fabricated to demonstrate its capability for logic applications.",

author = "H. Wang and L. Yu and Lee, {Y. H.} and W. Fang and A. Hsu and P. Herring and M. Chin and M. Dubey and Li, {L. J.} and J. Kong and T. Palacios",

year = "2012",

doi = "10.1109/IEDM.2012.6478980",

language = "English (US)",

isbn = "9781467348706",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "4.6.1--4.6.4",

booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",

note = "2012 IEEE International Electron Devices Meeting, IEDM 2012 ; Conference date: 10-12-2012 Through 13-12-2012",

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Wang, H, Yu, L, Lee, YH, Fang, W, Hsu, A, Herring, P, Chin, M, Dubey, M, Li, LJ, Kong, J & Palacios, T 2012, Large-scale 2D electronics based on single-layer MoS₂ grown by chemical vapor deposition. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6478980, Technical Digest - International Electron Devices Meeting, IEDM, pp. 4.6.1-4.6.4, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 12/10/12. https://doi.org/10.1109/IEDM.2012.6478980

Large-scale 2D electronics based on single-layer MoS₂ grown by chemical vapor deposition. / Wang, H.; Yu, L.; Lee, Y. H. et al.
2012 IEEE International Electron Devices Meeting, IEDM 2012. 2012. p. 4.6.1-4.6.4 6478980 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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