Large magnetoresistance in single-crystalline Ni50 Mn 50-x Inx alloys (x=14-16) upon martensitic transformation

S. Y. Yu; Zongwen Liu; G. D. Liu; J. L. Chen; Z. X. Cao; G. H. Wu; Bei Zhang; X. X. Zhang

doi:10.1063/1.2362581

Large magnetoresistance in single-crystalline Ni₅₀ Mn _50-x Inx alloys (x=14-16) upon martensitic transformation

S. Y. Yu, Zongwen Liu, G. D. Liu, J. L. Chen, Z. X. Cao, G. H. Wu^*, Bei Zhang, X. X. Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

412 Scopus citations

Abstract

Variation of electrical resistance in single-crystalline Ni50 Mn50-x Inx alloys (x=14-16) upon martensitic transformation was investigated. In Ni50 Mn35 In15 with Tm ∼295 K, a negative magnetoresistance (MR) over 60% is attainable at moderate field strengths; in Ni50 Mn34 In16 with Tm ∼190 K, the MR can exceed 70% over a temperature of approximately 100 K. The significant change in electric resistance upon martensitic transformation originates primarily from the altered electronic structure, while the large effect of a magnetic field follows its ability to manipulate the transformation in materials of low Tm and large ΔMΔS. The extremely large MR promises more innovative applications for these important alloys.

Original language	English (US)
Article number	162503
Journal	Applied Physics Letters
Volume	89
Issue number	16
DOIs	https://doi.org/10.1063/1.2362581
State	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Large magnetoresistance in single-crystalline Ni50 Mn 50-x Inx alloys (x=14-16) upon martensitic transformation",

abstract = "Variation of electrical resistance in single-crystalline Ni50 Mn50-x Inx alloys (x=14-16) upon martensitic transformation was investigated. In Ni50 Mn35 In15 with Tm ∼295 K, a negative magnetoresistance (MR) over 60% is attainable at moderate field strengths; in Ni50 Mn34 In16 with Tm ∼190 K, the MR can exceed 70% over a temperature of approximately 100 K. The significant change in electric resistance upon martensitic transformation originates primarily from the altered electronic structure, while the large effect of a magnetic field follows its ability to manipulate the transformation in materials of low Tm and large ΔMΔS. The extremely large MR promises more innovative applications for these important alloys.",

author = "Yu, {S. Y.} and Zongwen Liu and Liu, {G. D.} and Chen, {J. L.} and Cao, {Z. X.} and Wu, {G. H.} and Bei Zhang and Zhang, {X. X.}",

year = "2006",

doi = "10.1063/1.2362581",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Large magnetoresistance in single-crystalline Ni50 Mn 50-x Inx alloys (x=14-16) upon martensitic transformation

AU - Yu, S. Y.

AU - Liu, Zongwen

AU - Liu, G. D.

AU - Chen, J. L.

AU - Cao, Z. X.

AU - Wu, G. H.

AU - Zhang, Bei

AU - Zhang, X. X.

PY - 2006

Y1 - 2006

N2 - Variation of electrical resistance in single-crystalline Ni50 Mn50-x Inx alloys (x=14-16) upon martensitic transformation was investigated. In Ni50 Mn35 In15 with Tm ∼295 K, a negative magnetoresistance (MR) over 60% is attainable at moderate field strengths; in Ni50 Mn34 In16 with Tm ∼190 K, the MR can exceed 70% over a temperature of approximately 100 K. The significant change in electric resistance upon martensitic transformation originates primarily from the altered electronic structure, while the large effect of a magnetic field follows its ability to manipulate the transformation in materials of low Tm and large ΔMΔS. The extremely large MR promises more innovative applications for these important alloys.

AB - Variation of electrical resistance in single-crystalline Ni50 Mn50-x Inx alloys (x=14-16) upon martensitic transformation was investigated. In Ni50 Mn35 In15 with Tm ∼295 K, a negative magnetoresistance (MR) over 60% is attainable at moderate field strengths; in Ni50 Mn34 In16 with Tm ∼190 K, the MR can exceed 70% over a temperature of approximately 100 K. The significant change in electric resistance upon martensitic transformation originates primarily from the altered electronic structure, while the large effect of a magnetic field follows its ability to manipulate the transformation in materials of low Tm and large ΔMΔS. The extremely large MR promises more innovative applications for these important alloys.

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U2 - 10.1063/1.2362581

DO - 10.1063/1.2362581

M3 - Article

AN - SCOPUS:33750163827

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162503

ER -

Large magnetoresistance in single-crystalline Ni₅₀ Mn _50-x Inx alloys (x=14-16) upon martensitic transformation

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