TY - GEN
T1 - Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature
AU - Majid, Mohammed Abdul
AU - Al-Jabr, Ahmad
AU - Elafandy, Rami T.
AU - Oubei, Hassan M.
AU - Anjum, Dalaver H.
AU - Shehata, Mohamed
AU - Ng, Tien Khee
AU - Ooi, Boon S.
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors gratefully acknowledge the financial support from KACST Technology Innovation Center for Solid State Lighting at KAUST and Research Consultancy Institute (RCI) at Effat University.
PY - 2019/3/1
Y1 - 2019/3/1
N2 - In this paper, a thermally induced dielectric strain on quantum well intermixing (QWI) technique is employed on tensilestrained InGaP/InAlGaP laser structure, to promote inter-diffusion, in conjunction with cycle annealing at elevated temperature. A bandgap blueshift as large as large as ~250meV was observed for samples capped with a single and bilayer of the dielectric film (1μm-SiO2 and 0.1μm-Si3N4) and annealed at a high temperature (700-1000oC) for cycles of annealing steps. Samples subjected to this novel QWI technique for short duration and multiple cycle annealing steps shown a high degree of intermixing while maintaining strong photoluminescence (PL) intensity, narrow full wave at half maximum (FWHM) and good surface morphology. Laser devices fabricated using this technique, lased at a wavelength of 608nm with two facet power of ~46mW, indicating the high quality of the material. Our results show that thermal stress can be controlled by the engineering dielectric strain opening new perspectives for QWI of photonics devices.
AB - In this paper, a thermally induced dielectric strain on quantum well intermixing (QWI) technique is employed on tensilestrained InGaP/InAlGaP laser structure, to promote inter-diffusion, in conjunction with cycle annealing at elevated temperature. A bandgap blueshift as large as large as ~250meV was observed for samples capped with a single and bilayer of the dielectric film (1μm-SiO2 and 0.1μm-Si3N4) and annealed at a high temperature (700-1000oC) for cycles of annealing steps. Samples subjected to this novel QWI technique for short duration and multiple cycle annealing steps shown a high degree of intermixing while maintaining strong photoluminescence (PL) intensity, narrow full wave at half maximum (FWHM) and good surface morphology. Laser devices fabricated using this technique, lased at a wavelength of 608nm with two facet power of ~46mW, indicating the high quality of the material. Our results show that thermal stress can be controlled by the engineering dielectric strain opening new perspectives for QWI of photonics devices.
UR - http://hdl.handle.net/10754/656517
UR - https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10939/2511878/Large-intermixing-in-the-InGaP-InAlGaP-laser-structure-using-stress/10.1117/12.2511878.full
UR - http://www.scopus.com/inward/record.url?scp=85065674261&partnerID=8YFLogxK
U2 - 10.1117/12.2511878
DO - 10.1117/12.2511878
M3 - Conference contribution
SN - 9781510625204
BT - Novel In-Plane Semiconductor Lasers XVIII
PB - SPIE
[email protected]
ER -