Large Intercalation Pseudocapacitance in 2D VO2 (B): Breaking through the Kinetic Barrier

Chuan Xia; Zifeng Lin; Yungang Zhou; Chao Zhao; Hanfeng Liang; Patrick Rozier; Zhiguo Wang; Husam N. Alshareef

doi:10.1002/adma.201803594

Large Intercalation Pseudocapacitance in 2D VO₂ (B): Breaking through the Kinetic Barrier

Chuan Xia, Zifeng Lin, Yungang Zhou, Chao Zhao, Hanfeng Liang, Patrick Rozier, Zhiguo Wang, Husam N. Alshareef^*

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

VO₂ (B) features two lithiation/delithiation processes, one of which is kinetically facile and has been commonly observed at 2.5 V versus Li/Li⁺ in various VO₂ (B) structures. In contrast, the other process, which occurs at 2.1 V versus Li/Li⁺, has only been observed at elevated temperatures due to large interaction energy barrier and extremely sluggish kinetics. Here, it is demonstrated that a rational design of atomically thin, 2D nanostructures of VO₂ (B) greatly lowers the interaction energy and Li⁺-diffusion barrier. Consequently, the kinetically sluggish step is successfully enabled to proceed at room temperature for the first time ever. The atomically thin 2D VO₂ (B) exhibits fast charge storage kinetics and enables fully reversible uptake and removal of Li ions from VO₂ (B) lattice without a phase change, resulting in exceptionally high performance. This work presents an effective strategy to speed up intrinsically sluggish processes in non-van der Waals layered materials.

Original language	English (US)
Article number	1803594
Journal	Advanced Materials
Volume	30
Issue number	40
DOIs	https://doi.org/10.1002/adma.201803594
State	Published - Oct 4 2018

Bibliographical note

Funding Information:
C.X., Z.L., and Y.Z. contributed equally to this work. Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). C.X. acknowledges support from Fan Zhang and Jing Guo at KAUST. The authors like to also thank Professor Bruce Dunn, UCLA, and Professor Patrice Simon, Université Paul Sabatier, for useful discussions.

Funding Information:
C.X., Z.L., and Y.Z. contributed equally to this work. Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). C.X. acknowledges support from Fan Zhang and Jing Guo at KAUST. The authors like to also thank Professor Bruce Dunn, UCLA, and Professor Patrice Simon, Universit? Paul Sabatier, for useful discussions.

Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

2D
intercalation
kinetic barrier
pseudocapacitance
ultrathin

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.201803594

Cite this

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title = "Large Intercalation Pseudocapacitance in 2D VO2 (B): Breaking through the Kinetic Barrier",

abstract = "VO2 (B) features two lithiation/delithiation processes, one of which is kinetically facile and has been commonly observed at 2.5 V versus Li/Li+ in various VO2 (B) structures. In contrast, the other process, which occurs at 2.1 V versus Li/Li+, has only been observed at elevated temperatures due to large interaction energy barrier and extremely sluggish kinetics. Here, it is demonstrated that a rational design of atomically thin, 2D nanostructures of VO2 (B) greatly lowers the interaction energy and Li+-diffusion barrier. Consequently, the kinetically sluggish step is successfully enabled to proceed at room temperature for the first time ever. The atomically thin 2D VO2 (B) exhibits fast charge storage kinetics and enables fully reversible uptake and removal of Li ions from VO2 (B) lattice without a phase change, resulting in exceptionally high performance. This work presents an effective strategy to speed up intrinsically sluggish processes in non-van der Waals layered materials.",

keywords = "2D, intercalation, kinetic barrier, pseudocapacitance, ultrathin",

author = "Chuan Xia and Zifeng Lin and Yungang Zhou and Chao Zhao and Hanfeng Liang and Patrick Rozier and Zhiguo Wang and Alshareef, {Husam N.}",

note = "Funding Information: C.X., Z.L., and Y.Z. contributed equally to this work. Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). C.X. acknowledges support from Fan Zhang and Jing Guo at KAUST. The authors like to also thank Professor Bruce Dunn, UCLA, and Professor Patrice Simon, Universit{\'e} Paul Sabatier, for useful discussions. Funding Information: C.X., Z.L., and Y.Z. contributed equally to this work. Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). C.X. acknowledges support from Fan Zhang and Jing Guo at KAUST. The authors like to also thank Professor Bruce Dunn, UCLA, and Professor Patrice Simon, Universit? Paul Sabatier, for useful discussions. Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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AU - Zhao, Chao

AU - Liang, Hanfeng

AU - Rozier, Patrick

AU - Wang, Zhiguo

AU - Alshareef, Husam N.

N1 - Funding Information: C.X., Z.L., and Y.Z. contributed equally to this work. Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). C.X. acknowledges support from Fan Zhang and Jing Guo at KAUST. The authors like to also thank Professor Bruce Dunn, UCLA, and Professor Patrice Simon, Université Paul Sabatier, for useful discussions. Funding Information: C.X., Z.L., and Y.Z. contributed equally to this work. Research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST). C.X. acknowledges support from Fan Zhang and Jing Guo at KAUST. The authors like to also thank Professor Bruce Dunn, UCLA, and Professor Patrice Simon, Universit? Paul Sabatier, for useful discussions. Publisher Copyright: © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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N2 - VO2 (B) features two lithiation/delithiation processes, one of which is kinetically facile and has been commonly observed at 2.5 V versus Li/Li+ in various VO2 (B) structures. In contrast, the other process, which occurs at 2.1 V versus Li/Li+, has only been observed at elevated temperatures due to large interaction energy barrier and extremely sluggish kinetics. Here, it is demonstrated that a rational design of atomically thin, 2D nanostructures of VO2 (B) greatly lowers the interaction energy and Li+-diffusion barrier. Consequently, the kinetically sluggish step is successfully enabled to proceed at room temperature for the first time ever. The atomically thin 2D VO2 (B) exhibits fast charge storage kinetics and enables fully reversible uptake and removal of Li ions from VO2 (B) lattice without a phase change, resulting in exceptionally high performance. This work presents an effective strategy to speed up intrinsically sluggish processes in non-van der Waals layered materials.

AB - VO2 (B) features two lithiation/delithiation processes, one of which is kinetically facile and has been commonly observed at 2.5 V versus Li/Li+ in various VO2 (B) structures. In contrast, the other process, which occurs at 2.1 V versus Li/Li+, has only been observed at elevated temperatures due to large interaction energy barrier and extremely sluggish kinetics. Here, it is demonstrated that a rational design of atomically thin, 2D nanostructures of VO2 (B) greatly lowers the interaction energy and Li+-diffusion barrier. Consequently, the kinetically sluggish step is successfully enabled to proceed at room temperature for the first time ever. The atomically thin 2D VO2 (B) exhibits fast charge storage kinetics and enables fully reversible uptake and removal of Li ions from VO2 (B) lattice without a phase change, resulting in exceptionally high performance. This work presents an effective strategy to speed up intrinsically sluggish processes in non-van der Waals layered materials.

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