TY - JOUR
T1 - Large-area WSe2 electric double layer transistors on a plastic substrate
AU - Funahashi, Kazuma
AU - Pu, Jiang
AU - Li, Ming-yang
AU - Li, Lain-Jong
AU - Iwasa, Yoshihiro
AU - Takenobu, Taishi
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2015/4/27
Y1 - 2015/4/27
N2 - Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. © 2015 The Japan Society of Applied Physics.
AB - Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe2 monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe2 films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼104, demonstrating chemically grown WSe2 transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. © 2015 The Japan Society of Applied Physics.
UR - http://hdl.handle.net/10754/577116
UR - https://iopscience.iop.org/article/10.7567/JJAP.54.06FF06
UR - http://www.scopus.com/inward/record.url?scp=84930701837&partnerID=8YFLogxK
U2 - 10.7567/JJAP.54.06FF06
DO - 10.7567/JJAP.54.06FF06
M3 - Article
SN - 0021-4922
VL - 54
SP - 06FF06
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6S1
ER -