Large-area synthesis of highly crystalline WSe2 monolayers and device applications

Jing Kai Huang, Jiang Pu, Chang Lung Hsu, Ming Hui Chiu, Zhen Yu Juang, Yung Huang Chang, Wen Hao Chang, Yoshihiro Iwasa, Taishi Takenobu*, Lain Jong Li

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

785 Scopus citations

Abstract

The monolayer transition metal dichalcogenides have recently attracted much attention owing to their potential in valleytronics, flexible and low-power electronics, and optoelectronic devices. Recent reports have demonstrated the growth of large-size two-dimensional MoS2 layers by the sulfurization of molybdenum oxides. However, the growth of a transition metal selenide monolayer has still been a challenge. Here we report that the introduction of hydrogen in the reaction chamber helps to activate the selenization of WO 3, where large-size WSe2 monolayer flakes or thin films can be successfully grown. The top-gated field-effect transistors based on WSe2 monolayers using ionic gels as the dielectrics exhibit ambipolar characteristics, where the hole and electron mobility values are up to 90 and 7 cm2/Vs, respectively. These films can be transferred onto arbitrary substrates, which may inspire research efforts to explore their properties and applications. The resistor-loaded inverter based on a WSe2 film, with a gain of ∼13, further demonstrates its applicability for logic-circuit integrations.

Original languageEnglish (US)
Pages (from-to)923-930
Number of pages8
JournalACS Nano
Volume8
Issue number1
DOIs
StatePublished - Jan 28 2014
Externally publishedYes

Keywords

  • inverters
  • layered materials
  • transistors
  • transition metal dichalcogenides
  • tungsten diselenides
  • two-dimensional materials

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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