Large-area multilayer molybdenum disulfide for 2D memristors

Pingping Zhuang; Han Yan; Bo Li; Chao Dou; Tian Ye; Changjie Zhou; Huili Zhu; Bo Tian; Yushan Chen; Dong Lin; Weiwei Cai; Daquan Yu; Jing Liu; Weiyi Lin

doi:10.1016/j.mtnano.2023.100353

Large-area multilayer molybdenum disulfide for 2D memristors

Pingping Zhuang, Han Yan, Bo Li, Chao Dou, Tian Ye, Changjie Zhou, Huili Zhu, Bo Tian, Yushan Chen, Dong Lin, Weiwei Cai, Daquan Yu, Jing Liu, Weiyi Lin

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Resistive random access memories (RRAMs) using two-dimensional (2D) materials have delivered comparable switching performance with CMOS devices. However, devices risk short problems because of their ultra-thin body, thus yielding poorly. In this study, we realize high-yield RRAMs thanks to the synthesis of uniform large-area multilayer molybdenum disulfide by thermally decomposing ammonium tetrathiomolybdate. This top-down method has advantages over mainstream chemical vapor deposition, in which layer-by-layer epitaxy is forbidden when surface energy elevates. The resulting film surface roughness is down to 93.8 pm, and its lateral size can be scaled up to wafer scale. A yield value higher than 90% was estimated by testing 8 × 8 RRAM arrays, reaching nearly 100% in isolated devices. These devices show low operation voltages (∼1V) with low cycle-to-cycle and device-to-device variations (∼12%). We also observed stable resistive switching of multilayer films prepared at 400 °C. The large-area synthesis of uniform multilayer films makes it more feasible to use 2D semiconductors in practical RRAM technology for wafer-scale integration.

Original language	English (US)
Pages (from-to)	100353
Journal	Materials Today Nano
Volume	23
DOIs	https://doi.org/10.1016/j.mtnano.2023.100353
State	Published - May 30 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-06-06
Acknowledgements: This work was supported by the National Natural Science Foundation of China (62004095, 62204096, and 62275102), the Fundamental Research Funds for the Central Universities (20720220090), the Natural Science Foundation of Fujian Province of China (2021J05176, 2022J05015, 2020J01704, 2022J01822, and 2019H0022), the Fujian Provincial Department of Education of China (JAT200291), the Science and Technology Major Project of Fujian Province (2022HZ022019), the Science Foundation of Jimei University, China (ZQ2020014), the Science Foundation for Distinguished Young Scholars of Fujian Province (2020J06025), the Youth Talent Support Program of Jimei University (ZR2019002), the Innovation Foundation for Young Scientists of Xiamen (2020FCX012501010105), the Xiamen Marine and Fishery Development Special Foundation (20CZB014HJ03), and the Youth Talent Support Program of Fujian Province (Eyas Plan of Fujian Province, 2021).

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@article{a5ed75763b5b4619a0735c98c49d7eb1,

title = "Large-area multilayer molybdenum disulfide for 2D memristors",

abstract = "Resistive random access memories (RRAMs) using two-dimensional (2D) materials have delivered comparable switching performance with CMOS devices. However, devices risk short problems because of their ultra-thin body, thus yielding poorly. In this study, we realize high-yield RRAMs thanks to the synthesis of uniform large-area multilayer molybdenum disulfide by thermally decomposing ammonium tetrathiomolybdate. This top-down method has advantages over mainstream chemical vapor deposition, in which layer-by-layer epitaxy is forbidden when surface energy elevates. The resulting film surface roughness is down to 93.8 pm, and its lateral size can be scaled up to wafer scale. A yield value higher than 90% was estimated by testing 8 × 8 RRAM arrays, reaching nearly 100% in isolated devices. These devices show low operation voltages (∼1V) with low cycle-to-cycle and device-to-device variations (∼12%). We also observed stable resistive switching of multilayer films prepared at 400 °C. The large-area synthesis of uniform multilayer films makes it more feasible to use 2D semiconductors in practical RRAM technology for wafer-scale integration.",

author = "Pingping Zhuang and Han Yan and Bo Li and Chao Dou and Tian Ye and Changjie Zhou and Huili Zhu and Bo Tian and Yushan Chen and Dong Lin and Weiwei Cai and Daquan Yu and Jing Liu and Weiyi Lin",

note = "KAUST Repository Item: Exported on 2023-06-06 Acknowledgements: This work was supported by the National Natural Science Foundation of China (62004095, 62204096, and 62275102), the Fundamental Research Funds for the Central Universities (20720220090), the Natural Science Foundation of Fujian Province of China (2021J05176, 2022J05015, 2020J01704, 2022J01822, and 2019H0022), the Fujian Provincial Department of Education of China (JAT200291), the Science and Technology Major Project of Fujian Province (2022HZ022019), the Science Foundation of Jimei University, China (ZQ2020014), the Science Foundation for Distinguished Young Scholars of Fujian Province (2020J06025), the Youth Talent Support Program of Jimei University (ZR2019002), the Innovation Foundation for Young Scientists of Xiamen (2020FCX012501010105), the Xiamen Marine and Fishery Development Special Foundation (20CZB014HJ03), and the Youth Talent Support Program of Fujian Province (Eyas Plan of Fujian Province, 2021).",

year = "2023",

month = may,

day = "30",

doi = "10.1016/j.mtnano.2023.100353",

language = "English (US)",

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pages = "100353",

journal = "Materials Today Nano",

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T1 - Large-area multilayer molybdenum disulfide for 2D memristors

AU - Zhuang, Pingping

AU - Yan, Han

AU - Li, Bo

AU - Dou, Chao

AU - Ye, Tian

AU - Zhou, Changjie

AU - Zhu, Huili

AU - Tian, Bo

AU - Chen, Yushan

AU - Lin, Dong

AU - Cai, Weiwei

AU - Yu, Daquan

AU - Liu, Jing

AU - Lin, Weiyi

N1 - KAUST Repository Item: Exported on 2023-06-06 Acknowledgements: This work was supported by the National Natural Science Foundation of China (62004095, 62204096, and 62275102), the Fundamental Research Funds for the Central Universities (20720220090), the Natural Science Foundation of Fujian Province of China (2021J05176, 2022J05015, 2020J01704, 2022J01822, and 2019H0022), the Fujian Provincial Department of Education of China (JAT200291), the Science and Technology Major Project of Fujian Province (2022HZ022019), the Science Foundation of Jimei University, China (ZQ2020014), the Science Foundation for Distinguished Young Scholars of Fujian Province (2020J06025), the Youth Talent Support Program of Jimei University (ZR2019002), the Innovation Foundation for Young Scientists of Xiamen (2020FCX012501010105), the Xiamen Marine and Fishery Development Special Foundation (20CZB014HJ03), and the Youth Talent Support Program of Fujian Province (Eyas Plan of Fujian Province, 2021).

PY - 2023/5/30

Y1 - 2023/5/30

N2 - Resistive random access memories (RRAMs) using two-dimensional (2D) materials have delivered comparable switching performance with CMOS devices. However, devices risk short problems because of their ultra-thin body, thus yielding poorly. In this study, we realize high-yield RRAMs thanks to the synthesis of uniform large-area multilayer molybdenum disulfide by thermally decomposing ammonium tetrathiomolybdate. This top-down method has advantages over mainstream chemical vapor deposition, in which layer-by-layer epitaxy is forbidden when surface energy elevates. The resulting film surface roughness is down to 93.8 pm, and its lateral size can be scaled up to wafer scale. A yield value higher than 90% was estimated by testing 8 × 8 RRAM arrays, reaching nearly 100% in isolated devices. These devices show low operation voltages (∼1V) with low cycle-to-cycle and device-to-device variations (∼12%). We also observed stable resistive switching of multilayer films prepared at 400 °C. The large-area synthesis of uniform multilayer films makes it more feasible to use 2D semiconductors in practical RRAM technology for wafer-scale integration.

AB - Resistive random access memories (RRAMs) using two-dimensional (2D) materials have delivered comparable switching performance with CMOS devices. However, devices risk short problems because of their ultra-thin body, thus yielding poorly. In this study, we realize high-yield RRAMs thanks to the synthesis of uniform large-area multilayer molybdenum disulfide by thermally decomposing ammonium tetrathiomolybdate. This top-down method has advantages over mainstream chemical vapor deposition, in which layer-by-layer epitaxy is forbidden when surface energy elevates. The resulting film surface roughness is down to 93.8 pm, and its lateral size can be scaled up to wafer scale. A yield value higher than 90% was estimated by testing 8 × 8 RRAM arrays, reaching nearly 100% in isolated devices. These devices show low operation voltages (∼1V) with low cycle-to-cycle and device-to-device variations (∼12%). We also observed stable resistive switching of multilayer films prepared at 400 °C. The large-area synthesis of uniform multilayer films makes it more feasible to use 2D semiconductors in practical RRAM technology for wafer-scale integration.

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UR - https://linkinghub.elsevier.com/retrieve/pii/S2588842023000524

UR - http://www.scopus.com/inward/record.url?scp=85160442601&partnerID=8YFLogxK

U2 - 10.1016/j.mtnano.2023.100353

DO - 10.1016/j.mtnano.2023.100353

M3 - Article

SN - 2588-8420

VL - 23

SP - 100353

JO - Materials Today Nano

JF - Materials Today Nano

ER -

Large-area multilayer molybdenum disulfide for 2D memristors

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