Large-area few-layer MoS 2 deposited by sputtering

Jyun-Hong Huang; Hsing-Hung Chen; Pang-Shiuan Liu; Li-Syuan Lu; Chien-Ting Wu; Cheng-Tung Chou; Yao-Jen Lee; Lain-Jong Li; Wen-Hao Chang; Tuo-Hung Hou

doi:10.1088/2053-1591/3/6/065007

Large-area few-layer MoS 2 deposited by sputtering

Jyun-Hong Huang, Hsing-Hung Chen, Pang-Shiuan Liu, Li-Syuan Lu, Chien-Ting Wu, Cheng-Tung Chou, Yao-Jen Lee, Lain-Jong Li, Wen-Hao Chang, Tuo-Hung Hou

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Abstract

Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm(2) and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 10(4). The relatively low mobility is attributed to the small grain size of 0.1-1 mu m with a trap charge density in grain boundaries of the order of 10(13) cm(-2).

Original language	English (US)
Pages (from-to)	065007
Journal	Materials Research Express
Volume	3
Issue number	6
DOIs	https://doi.org/10.1088/2053-1591/3/6/065007
State	Published - Jun 6 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by Ministry of Science and Technology of Taiwan, Republic of China, under grant MOST103-2221-E-009-221-MY3 and 102-2119-M-001-005-MY3, and by NCTU-UCB I-RiCE program, under grant MOST104-2911-I-009-301. The authors are grateful to the Nano Facility Center at National Chiao Tung University and National Nano Device Laboratories, where the experiments in this paper were performed.

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title = "Large-area few-layer MoS 2 deposited by sputtering",

abstract = "Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm(2) and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 10(4). The relatively low mobility is attributed to the small grain size of 0.1-1 mu m with a trap charge density in grain boundaries of the order of 10(13) cm(-2).",

author = "Jyun-Hong Huang and Hsing-Hung Chen and Pang-Shiuan Liu and Li-Syuan Lu and Chien-Ting Wu and Cheng-Tung Chou and Yao-Jen Lee and Lain-Jong Li and Wen-Hao Chang and Tuo-Hung Hou",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by Ministry of Science and Technology of Taiwan, Republic of China, under grant MOST103-2221-E-009-221-MY3 and 102-2119-M-001-005-MY3, and by NCTU-UCB I-RiCE program, under grant MOST104-2911-I-009-301. The authors are grateful to the Nano Facility Center at National Chiao Tung University and National Nano Device Laboratories, where the experiments in this paper were performed.",

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AU - Huang, Jyun-Hong

AU - Chen, Hsing-Hung

AU - Liu, Pang-Shiuan

AU - Lu, Li-Syuan

AU - Wu, Chien-Ting

AU - Chou, Cheng-Tung

AU - Lee, Yao-Jen

AU - Li, Lain-Jong

AU - Chang, Wen-Hao

AU - Hou, Tuo-Hung

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by Ministry of Science and Technology of Taiwan, Republic of China, under grant MOST103-2221-E-009-221-MY3 and 102-2119-M-001-005-MY3, and by NCTU-UCB I-RiCE program, under grant MOST104-2911-I-009-301. The authors are grateful to the Nano Facility Center at National Chiao Tung University and National Nano Device Laboratories, where the experiments in this paper were performed.

PY - 2016/6/6

Y1 - 2016/6/6

N2 - Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm(2) and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 10(4). The relatively low mobility is attributed to the small grain size of 0.1-1 mu m with a trap charge density in grain boundaries of the order of 10(13) cm(-2).

AB - Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm(2) and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 10(4). The relatively low mobility is attributed to the small grain size of 0.1-1 mu m with a trap charge density in grain boundaries of the order of 10(13) cm(-2).

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Large-area few-layer MoS 2 deposited by sputtering

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