Large Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control

Martha I. Serna; Seong H. Yoo; Salvador Moreno; Yang Xi; Juan Pablo Oviedo; Hyunjoo Choi; Husam N. Alshareef; Moon J. Kim; Majid Minary-Jolandan; Manuel A. Quevedo-Lopez

doi:10.1021/acsnano.6b01636

Large Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control

Martha I. Serna, Seong H. Yoo, Salvador Moreno, Yang Xi, Juan Pablo Oviedo, Hyunjoo Choi, Husam N. Alshareef, Moon J. Kim, Majid Minary-Jolandan, Manuel A. Quevedo-Lopez

Research output: Contribution to journal › Article › peer-review

212 Scopus citations

Abstract

A scalable and catalyst-free method to deposit stoichiometric Molybdenum Disulfide (MoS2) films over large areas is reported with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation including single crystals (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2). The films are deposited using carefully designed MoS2 targets fabricated with excess of sulfur (S) and variable MoS2 and S particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 104 Ω cm-1 were achieved. The MoS2 stoichiometry was as confirmed by High Resolution Rutherford Backscattering Spectrometry (HRRBS). With the method reported here, in situ graded MoS2 films ranging from ~1 to 10 monolayers can also be deposited.

Original language	English (US)
Pages (from-to)	6054-6061
Number of pages	8
Journal	ACS Nano
Volume	10
Issue number	6
DOIs	https://doi.org/10.1021/acsnano.6b01636
State	Published - May 31 2016

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The Authors want to thank the National Science Foundation- Division of Electrical,
Communications and Cyber Systems (Grant 1139986), Colciencias, Kookmin University, and
The Leading Foreign Research Institute Recruitment Program through the National Research
Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning(MSIP)
(Grant 2013K1A4A3055679).

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10.1021/acsnano.6b01636

https://repository.kaust.edu.sa/bitstream/10754/611336/1/acsnano2E6b01636.pdf

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@article{99267207799a4813bdc5c71338ab923c,

title = "Large Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control",

abstract = "A scalable and catalyst-free method to deposit stoichiometric Molybdenum Disulfide (MoS2) films over large areas is reported with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation including single crystals (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2). The films are deposited using carefully designed MoS2 targets fabricated with excess of sulfur (S) and variable MoS2 and S particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 104 Ω cm-1 were achieved. The MoS2 stoichiometry was as confirmed by High Resolution Rutherford Backscattering Spectrometry (HRRBS). With the method reported here, in situ graded MoS2 films ranging from ~1 to 10 monolayers can also be deposited.",

author = "Serna, {Martha I.} and Yoo, {Seong H.} and Salvador Moreno and Yang Xi and Oviedo, {Juan Pablo} and Hyunjoo Choi and Alshareef, {Husam N.} and Kim, {Moon J.} and Majid Minary-Jolandan and Quevedo-Lopez, {Manuel A.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The Authors want to thank the National Science Foundation- Division of Electrical, Communications and Cyber Systems (Grant 1139986), Colciencias, Kookmin University, and The Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning(MSIP) (Grant 2013K1A4A3055679).",

year = "2016",

month = may,

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doi = "10.1021/acsnano.6b01636",

language = "English (US)",

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pages = "6054--6061",

journal = "ACS Nano",

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publisher = "American Chemical Society",

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T1 - Large Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control

AU - Serna, Martha I.

AU - Yoo, Seong H.

AU - Moreno, Salvador

AU - Xi, Yang

AU - Oviedo, Juan Pablo

AU - Choi, Hyunjoo

AU - Alshareef, Husam N.

AU - Kim, Moon J.

AU - Minary-Jolandan, Majid

AU - Quevedo-Lopez, Manuel A.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The Authors want to thank the National Science Foundation- Division of Electrical, Communications and Cyber Systems (Grant 1139986), Colciencias, Kookmin University, and The Leading Foreign Research Institute Recruitment Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning(MSIP) (Grant 2013K1A4A3055679).

PY - 2016/5/31

Y1 - 2016/5/31

N2 - A scalable and catalyst-free method to deposit stoichiometric Molybdenum Disulfide (MoS2) films over large areas is reported with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation including single crystals (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2). The films are deposited using carefully designed MoS2 targets fabricated with excess of sulfur (S) and variable MoS2 and S particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 104 Ω cm-1 were achieved. The MoS2 stoichiometry was as confirmed by High Resolution Rutherford Backscattering Spectrometry (HRRBS). With the method reported here, in situ graded MoS2 films ranging from ~1 to 10 monolayers can also be deposited.

AB - A scalable and catalyst-free method to deposit stoichiometric Molybdenum Disulfide (MoS2) films over large areas is reported with the maximum area limited by the size of the substrate holder. The method allows deposition of MoS2 layers on a wide range of substrates without any additional surface preparation including single crystals (sapphire and quartz), polycrystalline (HfO2), and amorphous (SiO2). The films are deposited using carefully designed MoS2 targets fabricated with excess of sulfur (S) and variable MoS2 and S particle size. Uniform and layered MoS2 films as thin as two monolayers, with an electrical resistivity of 1.54 × 104 Ω cm-1 were achieved. The MoS2 stoichiometry was as confirmed by High Resolution Rutherford Backscattering Spectrometry (HRRBS). With the method reported here, in situ graded MoS2 films ranging from ~1 to 10 monolayers can also be deposited.

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Large Area Deposition of MoS2 by Pulsed Laser Deposition with In-Situ Thickness Control

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