Large-area and bright pulsed electroluminescence in monolayer semiconductors

Der Hsien Lien, Matin Amani, Sujay B. Desai, Geun Ho Ahn, Kevin Han, Jr Hau He, Joel W. Ager, Ming C. Wu, Ali Javey*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

116 Scopus citations


Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS2, WS2, MoSe2, and WSe2) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.

Original languageEnglish (US)
Article number1229
JournalNature Communications
Issue number1
StatePublished - Dec 1 2018

Bibliographical note

Funding Information:
We thank A.B. Sachid for advice on device simulations. Device fabrication and characterization were funded by the National Science Foundation (NSF) under program number 1623038. Materials growth was supported by the U.S. Department of Energy, Office of Science, Office ofBasic Energy Sciences, Materials Sciences and Engineering Division under contract no.DE-AC02-05CH11231 within the Electronic Materials Program (KC1201). S.B.D. acknowledges the Lam Research Graduate Fellowship.

Publisher Copyright:
© 2018 The Author(s).

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)


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