Junction properties of nickel phthalocyanine thin film devices utilising indium injecting electrodes

T. S. Shafai; T. D. Anthopoulos

doi:10.1016/S0040-6090(01)01345-1

Junction properties of nickel phthalocyanine thin film devices utilising indium injecting electrodes

T. S. Shafai^*, T. D. Anthopoulos

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

83 Scopus citations

Abstract

The d.c. electrical properties of gold/nickel phthalocyanine/indium (Au/NiPc/In) thin film structures have been investigated. Three-layered devices were fabricated utilising a sequential vacuum sublimation technique. At low voltages, current density in the forward direction was found to obey the diode equation, while for higher voltage levels, conduction was dominated by a space-charge-limited conduction (SCLC) mechanism. In the reverse bias direction a transition from electrode-limited to a bulk-limited conduction process was identified. After prolonged exposure of the sample to dry air a weak polarity dependence of conduction was observed. Analysis of the experimental data under reverse bias suggests a transition from electrode-limited to a bulk-limited conduction process for lower and higher applied voltages, respectively. After annealing of the samples at 393 K in vacuum for 20 min, a strong rectifying behaviour was evident. Results were interpreted in terms of an O₂ adsorption process at the NiPc/In interface. Hole trapping parameters together with various junction properties have been also reported and analysed.

Original language	English (US)
Pages (from-to)	361-367
Number of pages	7
Journal	Thin Solid Films
Volume	398-399
DOIs	https://doi.org/10.1016/S0040-6090(01)01345-1
State	Published - Nov 2001
Externally published	Yes
Event	28th International Conference on Metallurgia - San Diego,CA, United States Duration: Apr 30 2001 → May 30 2001

Keywords

Au/NiPc/In thin film structures
Three-layered devices
d.c. electrical properties

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/S0040-6090(01)01345-1

Cite this

@article{faef2be667cd4331bafcb61811ed5cba,

title = "Junction properties of nickel phthalocyanine thin film devices utilising indium injecting electrodes",

abstract = "The d.c. electrical properties of gold/nickel phthalocyanine/indium (Au/NiPc/In) thin film structures have been investigated. Three-layered devices were fabricated utilising a sequential vacuum sublimation technique. At low voltages, current density in the forward direction was found to obey the diode equation, while for higher voltage levels, conduction was dominated by a space-charge-limited conduction (SCLC) mechanism. In the reverse bias direction a transition from electrode-limited to a bulk-limited conduction process was identified. After prolonged exposure of the sample to dry air a weak polarity dependence of conduction was observed. Analysis of the experimental data under reverse bias suggests a transition from electrode-limited to a bulk-limited conduction process for lower and higher applied voltages, respectively. After annealing of the samples at 393 K in vacuum for 20 min, a strong rectifying behaviour was evident. Results were interpreted in terms of an O2 adsorption process at the NiPc/In interface. Hole trapping parameters together with various junction properties have been also reported and analysed.",

keywords = "Au/NiPc/In thin film structures, Three-layered devices, d.c. electrical properties",

author = "Shafai, {T. S.} and Anthopoulos, {T. D.}",

year = "2001",

month = nov,

doi = "10.1016/S0040-6090(01)01345-1",

language = "English (US)",

volume = "398-399",

pages = "361--367",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

note = "28th International Conference on Metallurgia ; Conference date: 30-04-2001 Through 30-05-2001",

}

TY - JOUR

T1 - Junction properties of nickel phthalocyanine thin film devices utilising indium injecting electrodes

AU - Shafai, T. S.

AU - Anthopoulos, T. D.

PY - 2001/11

Y1 - 2001/11

N2 - The d.c. electrical properties of gold/nickel phthalocyanine/indium (Au/NiPc/In) thin film structures have been investigated. Three-layered devices were fabricated utilising a sequential vacuum sublimation technique. At low voltages, current density in the forward direction was found to obey the diode equation, while for higher voltage levels, conduction was dominated by a space-charge-limited conduction (SCLC) mechanism. In the reverse bias direction a transition from electrode-limited to a bulk-limited conduction process was identified. After prolonged exposure of the sample to dry air a weak polarity dependence of conduction was observed. Analysis of the experimental data under reverse bias suggests a transition from electrode-limited to a bulk-limited conduction process for lower and higher applied voltages, respectively. After annealing of the samples at 393 K in vacuum for 20 min, a strong rectifying behaviour was evident. Results were interpreted in terms of an O2 adsorption process at the NiPc/In interface. Hole trapping parameters together with various junction properties have been also reported and analysed.

AB - The d.c. electrical properties of gold/nickel phthalocyanine/indium (Au/NiPc/In) thin film structures have been investigated. Three-layered devices were fabricated utilising a sequential vacuum sublimation technique. At low voltages, current density in the forward direction was found to obey the diode equation, while for higher voltage levels, conduction was dominated by a space-charge-limited conduction (SCLC) mechanism. In the reverse bias direction a transition from electrode-limited to a bulk-limited conduction process was identified. After prolonged exposure of the sample to dry air a weak polarity dependence of conduction was observed. Analysis of the experimental data under reverse bias suggests a transition from electrode-limited to a bulk-limited conduction process for lower and higher applied voltages, respectively. After annealing of the samples at 393 K in vacuum for 20 min, a strong rectifying behaviour was evident. Results were interpreted in terms of an O2 adsorption process at the NiPc/In interface. Hole trapping parameters together with various junction properties have been also reported and analysed.

KW - Au/NiPc/In thin film structures

KW - Three-layered devices

KW - d.c. electrical properties

UR - http://www.scopus.com/inward/record.url?scp=0035506869&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(01)01345-1

DO - 10.1016/S0040-6090(01)01345-1

M3 - Conference article

AN - SCOPUS:0035506869

SN - 0040-6090

VL - 398-399

SP - 361

EP - 367

JO - Thin Solid Films

JF - Thin Solid Films

T2 - 28th International Conference on Metallurgia

Y2 - 30 April 2001 through 30 May 2001

ER -

Junction properties of nickel phthalocyanine thin film devices utilising indium injecting electrodes

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this