Abstract
In the present work, we report the 25 MeV oxygen irradiation effects in n-type single crystal β-GaO at different fluences. We demonstrate that the symmetric stretching modes and bending vibrations of GaO and GaO units are impaired upon increasing O irradiation fluence. Blue and green photoluminescence (PL) emission bands are found to be mainly associated with gallium-oxygen divacancies, gallium vacancies and oxygen interstitials. The increase of optically active centers at low fluence and the PL quenching at high fluence are ascribed to the reduction of carrier density and the production of non-radiative recombination centers, respectively. The results envisage the possibility of obtaining pre-designed spectral behaviors by varying the oxygen irradiation fluence.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 095022 |
| Journal | Semiconductor Science and Technology |
| Volume | 33 |
| Issue number | 9 |
| DOIs | |
| State | Published - Aug 23 2018 |
Bibliographical note
KAUST Repository Item: Exported on 2020-04-23Acknowledgements: This work is supported by Science Challenge Project (No. TZ2018004), National Natural Science Foundation of China (No. 11775061 and No. 11205038) and the 111 Project under Grant No. B18017. The author CL (No. 201706125070) thanks financial support by Chinese Scholarship Council. The author YB thanks the Alexander-von-Humboldt foundation for providing a postdoctoral fellowship. The support by Joerg Grenzer for XRD measurements is gratefully acknowledged.