Irradiation effects on the structural and optical properties of single crystal β-Ga2O3

Chaoming Liu, Yonder Berencén, Jianqun Yang, Yidan Wei, Mao Wang, Ye Yuan, Chi Xu, Yufang Xie, Xingji Li, Shengqiang Zhou

Research output: Contribution to journalArticlepeer-review

35 Scopus citations


In the present work, we report the 25 MeV oxygen irradiation effects in n-type single crystal β-Ga2O3 at different fluences. We demonstrate that the symmetric stretching modes and bending vibrations of GaO4 and GaO6 units are impaired upon increasing O irradiation fluence. Blue and green photoluminescence (PL) emission bands are found to be mainly associated with gallium-oxygen divacancies, gallium vacancies and oxygen interstitials. The increase of optically active centers at low fluence and the PL quenching at high fluence are ascribed to the reduction of carrier density and the production of non-radiative recombination centers, respectively. The results envisage the possibility of obtaining pre-designed spectral behaviors by varying the oxygen irradiation fluence.

Original languageEnglish (US)
Article number095022
Issue number9
StatePublished - Aug 23 2018

Bibliographical note

Publisher Copyright:
© 2018 IOP Publishing Ltd.


  • ion irradiation
  • photoluminescence
  • radiation defect
  • β-GaO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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