Ion beam studies on reactive DC sputtered manganese doped indium tin oxide thin films

S. R. Sarath Kumar; P. Malar; Thomas Osipowicz; S. S. Banerjee; S. Kasiviswanathan

doi:10.1016/j.nimb.2007.12.075

Ion beam studies on reactive DC sputtered manganese doped indium tin oxide thin films

S. R. Sarath Kumar, P. Malar, Thomas Osipowicz, S. S. Banerjee, S. Kasiviswanathan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Indium based transparent conducting oxides doped with magnetic elements have been studied intensively in recent years with a view to develop novel ferromagnetic semiconductors for spin-based electronics. In the present work, we have grown manganese doped indium tin oxide (Mn:ITO) thin films, onto Si and Si/SiO₂ substrates by DC reactive sputtering of a composite target containing indium-tin alloy and manganese, in a gas mixture of oxygen and argon. Glancing angle X-ray diffraction (GXRD) studies reveal the polycrystalline nature of the films. Magnetic measurements carried out using vibrating sample magnetometer (VSM) suggest that the films are ferromagnetic at room temperature, with a saturation magnetization of ∼22.8 emu/cm³. The atomic percentages of In, Sn, Mn and O, as estimated using Rutherford backscattering spectrometry (RBS) are 37.0, 4.0, 1.6 and 57.4, respectively. RBS measurements reveal that the interface of the films with Si substrate has a ∼30 nm thick intermediate layer. This layer consists of oxygen, silicon, indium, tin and manganese, in the ratio 1:0.56:0.21:0.07:0.03, indicative of diffusion of elements across the interface. The films on Si/SiO₂, on the other hand, have a sharp interface.

Original language	English (US)
Pages (from-to)	1421-1424
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	266
Issue number	8
DOIs	https://doi.org/10.1016/j.nimb.2007.12.075
State	Published - Apr 2008
Externally published	Yes

Bibliographical note

Funding Information:
One of the authors, S.R. Sarath Kumar, thanks the financial assistance provided by Council of Scientific and Industrial Research (CSIR), Government of India in the form of a Senior Research Fellowship.

Keywords

DMS
Interface
TCO
Thin films

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nimb.2007.12.075

Cite this

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title = "Ion beam studies on reactive DC sputtered manganese doped indium tin oxide thin films",

abstract = "Indium based transparent conducting oxides doped with magnetic elements have been studied intensively in recent years with a view to develop novel ferromagnetic semiconductors for spin-based electronics. In the present work, we have grown manganese doped indium tin oxide (Mn:ITO) thin films, onto Si and Si/SiO2 substrates by DC reactive sputtering of a composite target containing indium-tin alloy and manganese, in a gas mixture of oxygen and argon. Glancing angle X-ray diffraction (GXRD) studies reveal the polycrystalline nature of the films. Magnetic measurements carried out using vibrating sample magnetometer (VSM) suggest that the films are ferromagnetic at room temperature, with a saturation magnetization of ∼22.8 emu/cm3. The atomic percentages of In, Sn, Mn and O, as estimated using Rutherford backscattering spectrometry (RBS) are 37.0, 4.0, 1.6 and 57.4, respectively. RBS measurements reveal that the interface of the films with Si substrate has a ∼30 nm thick intermediate layer. This layer consists of oxygen, silicon, indium, tin and manganese, in the ratio 1:0.56:0.21:0.07:0.03, indicative of diffusion of elements across the interface. The films on Si/SiO2, on the other hand, have a sharp interface.",

keywords = "DMS, Interface, TCO, Thin films",

author = "{Sarath Kumar}, {S. R.} and P. Malar and Thomas Osipowicz and Banerjee, {S. S.} and S. Kasiviswanathan",

note = "Funding Information: One of the authors, S.R. Sarath Kumar, thanks the financial assistance provided by Council of Scientific and Industrial Research (CSIR), Government of India in the form of a Senior Research Fellowship.",

year = "2008",

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doi = "10.1016/j.nimb.2007.12.075",

language = "English (US)",

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T1 - Ion beam studies on reactive DC sputtered manganese doped indium tin oxide thin films

AU - Sarath Kumar, S. R.

AU - Malar, P.

AU - Osipowicz, Thomas

AU - Banerjee, S. S.

AU - Kasiviswanathan, S.

N1 - Funding Information: One of the authors, S.R. Sarath Kumar, thanks the financial assistance provided by Council of Scientific and Industrial Research (CSIR), Government of India in the form of a Senior Research Fellowship.

PY - 2008/4

Y1 - 2008/4

N2 - Indium based transparent conducting oxides doped with magnetic elements have been studied intensively in recent years with a view to develop novel ferromagnetic semiconductors for spin-based electronics. In the present work, we have grown manganese doped indium tin oxide (Mn:ITO) thin films, onto Si and Si/SiO2 substrates by DC reactive sputtering of a composite target containing indium-tin alloy and manganese, in a gas mixture of oxygen and argon. Glancing angle X-ray diffraction (GXRD) studies reveal the polycrystalline nature of the films. Magnetic measurements carried out using vibrating sample magnetometer (VSM) suggest that the films are ferromagnetic at room temperature, with a saturation magnetization of ∼22.8 emu/cm3. The atomic percentages of In, Sn, Mn and O, as estimated using Rutherford backscattering spectrometry (RBS) are 37.0, 4.0, 1.6 and 57.4, respectively. RBS measurements reveal that the interface of the films with Si substrate has a ∼30 nm thick intermediate layer. This layer consists of oxygen, silicon, indium, tin and manganese, in the ratio 1:0.56:0.21:0.07:0.03, indicative of diffusion of elements across the interface. The films on Si/SiO2, on the other hand, have a sharp interface.

AB - Indium based transparent conducting oxides doped with magnetic elements have been studied intensively in recent years with a view to develop novel ferromagnetic semiconductors for spin-based electronics. In the present work, we have grown manganese doped indium tin oxide (Mn:ITO) thin films, onto Si and Si/SiO2 substrates by DC reactive sputtering of a composite target containing indium-tin alloy and manganese, in a gas mixture of oxygen and argon. Glancing angle X-ray diffraction (GXRD) studies reveal the polycrystalline nature of the films. Magnetic measurements carried out using vibrating sample magnetometer (VSM) suggest that the films are ferromagnetic at room temperature, with a saturation magnetization of ∼22.8 emu/cm3. The atomic percentages of In, Sn, Mn and O, as estimated using Rutherford backscattering spectrometry (RBS) are 37.0, 4.0, 1.6 and 57.4, respectively. RBS measurements reveal that the interface of the films with Si substrate has a ∼30 nm thick intermediate layer. This layer consists of oxygen, silicon, indium, tin and manganese, in the ratio 1:0.56:0.21:0.07:0.03, indicative of diffusion of elements across the interface. The films on Si/SiO2, on the other hand, have a sharp interface.

KW - DMS

KW - Interface

KW - TCO

KW - Thin films

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IS - 8

ER -

Ion beam studies on reactive DC sputtered manganese doped indium tin oxide thin films

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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