Invited paper: Flexible cmos and electrophoretic displays

David R. Allee; Sameer Venugopal; Roshith Krishna; Korhan Kaftanoglu; Manuel A. Quevedo-Lopez; Shrinivas Gowrisanker; Adrianno E. Avendano-Bolivar; Husam N. Alshareef; Bruce Gnade

doi:10.1889/1.3256899

Invited paper: Flexible cmos and electrophoretic displays

David R. Allee, Sameer Venugopal, Roshith Krishna, Korhan Kaftanoglu, Manuel A. Quevedo-Lopez, Shrinivas Gowrisanker, Adrianno E. Avendano-Bolivar, Husam N. Alshareef, Bruce Gnade

Physical Sciences and Engineering

Research output: Contribution to conference › Paper › peer-review

2 Scopus citations

Abstract

Flexible CMOS has been achieved by combining nMOS a-Si:H with pMOS pentacene thin film transistors on a plastic substrate. Flexible CMOS enables more than 300x reduction in power consumption for integrated source drivers for an electrophoretic display compared to a-Si:H only source drivers. Importantly, flexible CMOS reduces the source driver power well below the power required by the electrophoretic display backplane greatly extending battery life. Measurements on the electrical stress induced degradation of flexible CMOS logic gates are also presented.

Original language	English (US)
Pages	760-763
Number of pages	4
DOIs	https://doi.org/10.1889/1.3256899
State	Published - 2009
Event	2009 Vehicles and Photons Symposium - Dearborn, MI, United States Duration: Oct 15 2009 → Oct 16 2009

Conference

Conference	2009 Vehicles and Photons Symposium
Country/Territory	United States
City	Dearborn, MI
Period	10/15/09 → 10/16/09

Bibliographical note

Publisher Copyright:
© 2009 SID.

ASJC Scopus subject areas

General Engineering

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10.1889/1.3256899

Cite this

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title = "Invited paper: Flexible cmos and electrophoretic displays",

abstract = "Flexible CMOS has been achieved by combining nMOS a-Si:H with pMOS pentacene thin film transistors on a plastic substrate. Flexible CMOS enables more than 300x reduction in power consumption for integrated source drivers for an electrophoretic display compared to a-Si:H only source drivers. Importantly, flexible CMOS reduces the source driver power well below the power required by the electrophoretic display backplane greatly extending battery life. Measurements on the electrical stress induced degradation of flexible CMOS logic gates are also presented.",

author = "Allee, {David R.} and Sameer Venugopal and Roshith Krishna and Korhan Kaftanoglu and Quevedo-Lopez, {Manuel A.} and Shrinivas Gowrisanker and Avendano-Bolivar, {Adrianno E.} and Alshareef, {Husam N.} and Bruce Gnade",

note = "Publisher Copyright: {\textcopyright} 2009 SID.; 2009 Vehicles and Photons Symposium ; Conference date: 15-10-2009 Through 16-10-2009",

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doi = "10.1889/1.3256899",

language = "English (US)",

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T2 - 2009 Vehicles and Photons Symposium

AU - Allee, David R.

AU - Venugopal, Sameer

AU - Krishna, Roshith

AU - Kaftanoglu, Korhan

AU - Quevedo-Lopez, Manuel A.

AU - Gowrisanker, Shrinivas

AU - Avendano-Bolivar, Adrianno E.

AU - Alshareef, Husam N.

AU - Gnade, Bruce

PY - 2009

Y1 - 2009

N2 - Flexible CMOS has been achieved by combining nMOS a-Si:H with pMOS pentacene thin film transistors on a plastic substrate. Flexible CMOS enables more than 300x reduction in power consumption for integrated source drivers for an electrophoretic display compared to a-Si:H only source drivers. Importantly, flexible CMOS reduces the source driver power well below the power required by the electrophoretic display backplane greatly extending battery life. Measurements on the electrical stress induced degradation of flexible CMOS logic gates are also presented.

AB - Flexible CMOS has been achieved by combining nMOS a-Si:H with pMOS pentacene thin film transistors on a plastic substrate. Flexible CMOS enables more than 300x reduction in power consumption for integrated source drivers for an electrophoretic display compared to a-Si:H only source drivers. Importantly, flexible CMOS reduces the source driver power well below the power required by the electrophoretic display backplane greatly extending battery life. Measurements on the electrical stress induced degradation of flexible CMOS logic gates are also presented.

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DO - 10.1889/1.3256899

M3 - Paper

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Y2 - 15 October 2009 through 16 October 2009

ER -

Invited paper: Flexible cmos and electrophoretic displays

Abstract

Conference

Bibliographical note

ASJC Scopus subject areas

Access to Document

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