Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

Ahmed Fadil, Yiyu Ou, Daisuke Iida, Oleksii Kopylov, Haiyan Ou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.
Original languageEnglish (US)
Title of host publication2016 Conference on Lasers and Electro-Optics, CLEO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781943580118
DOIs
StatePublished - Dec 16 2016
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-21

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