@inproceedings{d6a4abca215146c2bf772ef299253ee8,
title = "Investigation on mc-Si bulk passivation using deuterated silicon-nitride",
abstract = "To investigate the passivation mechanism of thermally treated PECVD hydrogenated silicon nitride, hydrogen is replaced by deuterium, using deuterated gases during deposition. No difference in passivativing properties between both silicon nitride layers are observed. SIMS and ERD show that deuterium is diffusing directly from the silicon nitride layers during a thermal treatment, however the involved concentrations are very low. The amount of deuterium, diffusing deep into the bulk is below detection limit. This determines upper limits on both concentration and possible types of defects that are passivated.",
author = "Dekkers, {H. F.W.} and {De Wolf}, S. and G. Agostinelli and J. Szlufcik and T. Pernau and Arnoldbik, {W. M.} and Goldbach, {H. D.} and Schropp, {R. E.I.}",
year = "2003",
language = "English (US)",
isbn = "4990181603",
series = "Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion",
pages = "983--986",
editor = "K. Kurokawa and L.L. Kazmerski and B. McNeils and M. Yamaguchi and C. Wronski",
booktitle = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion",
note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",
}