Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

W. K. Cheah; W. J. Fan; S. F. Yoon; T. K. Ng; W. K. Loke; D. H. Zhang; T. Mei; R. Liu; A. T.S. Wee

doi:10.1016/j.jcrysgro.2004.12.020

Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

W. K. Cheah, W. J. Fan^*, S. F. Yoon, T. K. Ng, W. K. Loke, D. H. Zhang, T. Mei, R. Liu, A. T.S. Wee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The indium and nitrogen incorporation in InGaAsN/InGaAs/GaAsN grown on GaAs substrates is investigated by means of photoluminescence (PL) and secondary ion mass spectroscopy (SIMS) measurements. The elemental profile and concentration collected from the two methods are then used as the simulation parameters to fit the X-ray diffractometry (XRD) measurements. The simulations indicate that the epitaxial parameters in our growth of InGaAsN/InGaAs/GaAsN epilayers are consistent throughout the three methods of analysis.

Original language	English (US)
Pages (from-to)	440-447
Number of pages	8
Journal	Journal of Crystal Growth
Volume	275
Issue number	3-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.12.020
State	Published - Mar 1 2005
Externally published	Yes

Keywords

A1. High resolution X-ray diffraction
A1. Photoluminescence
A1. Secondary ion mass spectroscopy
A3. Molecular beam epitaxy
B1. GaAsN
B1. InGaAsN

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2004.12.020

Cite this

@article{b343f8b2d1ea454992d9dceb02663996,

title = "Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy",

abstract = "The indium and nitrogen incorporation in InGaAsN/InGaAs/GaAsN grown on GaAs substrates is investigated by means of photoluminescence (PL) and secondary ion mass spectroscopy (SIMS) measurements. The elemental profile and concentration collected from the two methods are then used as the simulation parameters to fit the X-ray diffractometry (XRD) measurements. The simulations indicate that the epitaxial parameters in our growth of InGaAsN/InGaAs/GaAsN epilayers are consistent throughout the three methods of analysis.",

keywords = "A1. High resolution X-ray diffraction, A1. Photoluminescence, A1. Secondary ion mass spectroscopy, A3. Molecular beam epitaxy, B1. GaAsN, B1. InGaAsN",

author = "Cheah, {W. K.} and Fan, {W. J.} and Yoon, {S. F.} and Ng, {T. K.} and Loke, {W. K.} and Zhang, {D. H.} and T. Mei and R. Liu and Wee, {A. T.S.}",

year = "2005",

month = mar,

day = "1",

doi = "10.1016/j.jcrysgro.2004.12.020",

language = "English (US)",

volume = "275",

pages = "440--447",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

AU - Cheah, W. K.

AU - Fan, W. J.

AU - Yoon, S. F.

AU - Ng, T. K.

AU - Loke, W. K.

AU - Zhang, D. H.

AU - Mei, T.

AU - Liu, R.

AU - Wee, A. T.S.

PY - 2005/3/1

Y1 - 2005/3/1

N2 - The indium and nitrogen incorporation in InGaAsN/InGaAs/GaAsN grown on GaAs substrates is investigated by means of photoluminescence (PL) and secondary ion mass spectroscopy (SIMS) measurements. The elemental profile and concentration collected from the two methods are then used as the simulation parameters to fit the X-ray diffractometry (XRD) measurements. The simulations indicate that the epitaxial parameters in our growth of InGaAsN/InGaAs/GaAsN epilayers are consistent throughout the three methods of analysis.

AB - The indium and nitrogen incorporation in InGaAsN/InGaAs/GaAsN grown on GaAs substrates is investigated by means of photoluminescence (PL) and secondary ion mass spectroscopy (SIMS) measurements. The elemental profile and concentration collected from the two methods are then used as the simulation parameters to fit the X-ray diffractometry (XRD) measurements. The simulations indicate that the epitaxial parameters in our growth of InGaAsN/InGaAs/GaAsN epilayers are consistent throughout the three methods of analysis.

KW - A1. High resolution X-ray diffraction

KW - A1. Photoluminescence

KW - A1. Secondary ion mass spectroscopy

KW - A3. Molecular beam epitaxy

KW - B1. GaAsN

KW - B1. InGaAsN

UR - http://www.scopus.com/inward/record.url?scp=14844366136&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2004.12.020

DO - 10.1016/j.jcrysgro.2004.12.020

M3 - Article

AN - SCOPUS:14844366136

SN - 0022-0248

VL - 275

SP - 440

EP - 447

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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