Investigation of InGaN-based red/green micro-light-emitting diodes

Research output: Contribution to journalArticlepeer-review

49 Scopus citations

Abstract

We investigated the performance of InGaN-based red/green micro-light-emitting diodes (µLEDs) ranging from 98 × 98 µm2 to 17 × 17 µm. The average forward voltage at 10 A/cm2 was independent of the dimension of µLEDs. Red µLEDs exhibited a larger blueshift of the peak wavelength (∼35 nm) and broader full-width at half maximum (≥50 nm) at 2−50 A/cm2 compared to green µLEDs. We demonstrated that 47 × 47 µm2 red µLEDs had an on-wafer external quantum efficiency of 0.36% at the peak wavelength of 626 nm, close to the red primary color defined in the recommendation 2020 standard.
Original languageEnglish (US)
Pages (from-to)1912
JournalOptics Letters
Volume46
Issue number8
DOIs
StatePublished - Apr 12 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-04-14
Acknowledged KAUST grant number(s): BAS/1/1676-01-01
Acknowledgements: King Abdullah University of Science and Technology (BAS/1/1676-01-01).

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Fingerprint

Dive into the research topics of 'Investigation of InGaN-based red/green micro-light-emitting diodes'. Together they form a unique fingerprint.

Cite this