Investigation of fast and slow decays in InGaN/GaN quantum wells

Guan Sun*, Guibao Xu, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, Nelson Tansu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

53 Scopus citations


We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.

Original languageEnglish (US)
Article number081104
JournalApplied Physics Letters
Issue number8
StatePublished - Aug 22 2011
Externally publishedYes

Bibliographical note

Funding Information:
This work has been supported by U.S. DARPA and U.S. NSF (ECCS #0701421 and ECCS #1028490).

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Investigation of fast and slow decays in InGaN/GaN quantum wells'. Together they form a unique fingerprint.

Cite this