Investigation of fast and slow decays in InGaN/GaN quantum wells

Guan Sun; Guibao Xu; Yujie J. Ding; Hongping Zhao; Guangyu Liu; Jing Zhang; Nelson Tansu

doi:10.1063/1.3627166

Investigation of fast and slow decays in InGaN/GaN quantum wells

Guan Sun^*, Guibao Xu, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, Nelson Tansu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.

Original language	English (US)
Article number	081104
Journal	Applied Physics Letters
Volume	99
Issue number	8
DOIs	https://doi.org/10.1063/1.3627166
State	Published - Aug 22 2011
Externally published	Yes

Bibliographical note

Funding Information:
This work has been supported by U.S. DARPA and U.S. NSF (ECCS #0701421 and ECCS #1028490).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3627166

Cite this

@article{67e83af00d9849cca5ddbba7bc8af7f3,

title = "Investigation of fast and slow decays in InGaN/GaN quantum wells",

abstract = "We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.",

author = "Guan Sun and Guibao Xu and Ding, {Yujie J.} and Hongping Zhao and Guangyu Liu and Jing Zhang and Nelson Tansu",

note = "Funding Information: This work has been supported by U.S. DARPA and U.S. NSF (ECCS #0701421 and ECCS #1028490).",

year = "2011",

month = aug,

day = "22",

doi = "10.1063/1.3627166",

language = "English (US)",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "8",

}

TY - JOUR

T1 - Investigation of fast and slow decays in InGaN/GaN quantum wells

AU - Sun, Guan

AU - Xu, Guibao

AU - Ding, Yujie J.

AU - Zhao, Hongping

AU - Liu, Guangyu

AU - Zhang, Jing

AU - Tansu, Nelson

N1 - Funding Information: This work has been supported by U.S. DARPA and U.S. NSF (ECCS #0701421 and ECCS #1028490).

PY - 2011/8/22

Y1 - 2011/8/22

N2 - We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.

AB - We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.

UR - http://www.scopus.com/inward/record.url?scp=80052417863&partnerID=8YFLogxK

U2 - 10.1063/1.3627166

DO - 10.1063/1.3627166

M3 - Article

AN - SCOPUS:80052417863

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081104

ER -

Investigation of fast and slow decays in InGaN/GaN quantum wells

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this