The authors have introduced a technique to investigate the carrier dynamics of semiconductor nanostructures. Such a technique is based on the measurement of time-resolved differential photoluminescence spectra induced by subpicosecond pump and probe laser pulses by adjusting the temporal delay between them. Their results obtained on the InAs quantum dots embedded in InGaAsGaAs quantum wells using such a technique indicate that the exciton decay time, integrated photoluminescence intensity, and photoluminescence linewidth exhibit unique dependences on temperature.
Bibliographical noteFunding Information:
This work has been supported by U.S. DARPA and AFOSR. Two of the authors (Y.I.D. and B.S.O.) are also members of the Center for Optical Technologies, Lehigh University. One of the authors (Y.I.D.) is also an affiliate member of the Center for Advanced Materials and Nanotechnology, Lehigh University.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)