Investigation of carrier dynamics on InAs quantum dots embedded in InGaAsGaAs quantum wells based on time-resolved pump and probe differential photoluminescence

Xiaodong Mu*, Yujie J. Ding, Boon Ooi, Mark Hopkinson

*Corresponding author for this work

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31 Scopus citations


The authors have introduced a technique to investigate the carrier dynamics of semiconductor nanostructures. Such a technique is based on the measurement of time-resolved differential photoluminescence spectra induced by subpicosecond pump and probe laser pulses by adjusting the temporal delay between them. Their results obtained on the InAs quantum dots embedded in InGaAsGaAs quantum wells using such a technique indicate that the exciton decay time, integrated photoluminescence intensity, and photoluminescence linewidth exhibit unique dependences on temperature.

Original languageEnglish (US)
Article number181924
JournalApplied Physics Letters
Issue number18
StatePublished - Nov 13 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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