Abstract
We have observed peculiar behaviors on the dependence of photoluminescence emission peak on excitation fluence in InGaN/GaN multiple quantum wells.
Original language | English (US) |
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Title of host publication | Quantum Electronics and Laser Science Conference, QELS 2011 |
State | Published - 2011 |
Externally published | Yes |
Event | Quantum Electronics and Laser Science Conference, QELS 2011 - Baltimore, MD, United States Duration: May 1 2011 → May 6 2011 |
Other
Other | Quantum Electronics and Laser Science Conference, QELS 2011 |
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Country/Territory | United States |
City | Baltimore, MD |
Period | 05/1/11 → 05/6/11 |
ASJC Scopus subject areas
- Instrumentation
- Atomic and Molecular Physics, and Optics