TY - GEN
T1 - Investigation of amber light-emitting diodes based on InGaN/AlN/AlGaN quantum wells
AU - Iida, Daisuke
AU - Lu, Shen
AU - Hirahara, Sota
AU - Niwa, Kazumasa
AU - Kamiyama, Satoshi
AU - Ohkawa, Kazuhiro
N1 - Generated from Scopus record by KAUST IRTS on 2023-09-21
PY - 2016/5/1
Y1 - 2016/5/1
N2 - We investigated InGaN-based amber light-emitting diodes (LEDs) with AlN/(Al)GaN barrier layers grown by metalorganic vapor-phase epitaxy. Tensilely strained AlN/Al0.03Ga0.97N barriers improved the crystalline quality of compressively strained InGaN quantum wells. We found that strain compensation among wells and barriers improves the external quantum efficiency of high-In-content InGaN-based amber LEDs. The amber LEDs with AlN/Al0.03Ga0.97N barriers have shown an electroluminescence (EL) intensity approximately 2.5-fold that of LEDs with the AlN/GaN barriers at 20 mA.
AB - We investigated InGaN-based amber light-emitting diodes (LEDs) with AlN/(Al)GaN barrier layers grown by metalorganic vapor-phase epitaxy. Tensilely strained AlN/Al0.03Ga0.97N barriers improved the crystalline quality of compressively strained InGaN quantum wells. We found that strain compensation among wells and barriers improves the external quantum efficiency of high-In-content InGaN-based amber LEDs. The amber LEDs with AlN/Al0.03Ga0.97N barriers have shown an electroluminescence (EL) intensity approximately 2.5-fold that of LEDs with the AlN/GaN barriers at 20 mA.
UR - https://iopscience.iop.org/article/10.7567/JJAP.55.05FJ06
UR - http://www.scopus.com/inward/record.url?scp=84965062226&partnerID=8YFLogxK
U2 - 10.7567/JJAP.55.05FJ06
DO - 10.7567/JJAP.55.05FJ06
M3 - Conference contribution
BT - Japanese Journal of Applied Physics
PB - Japan Society of Applied [email protected]
ER -