Investigation of amber light-emitting diodes based on InGaN/AlN/AlGaN quantum wells

Daisuke Iida, Shen Lu, Sota Hirahara, Kazumasa Niwa, Satoshi Kamiyama, Kazuhiro Ohkawa

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


We investigated InGaN-based amber light-emitting diodes (LEDs) with AlN/(Al)GaN barrier layers grown by metalorganic vapor-phase epitaxy. Tensilely strained AlN/Al0.03Ga0.97N barriers improved the crystalline quality of compressively strained InGaN quantum wells. We found that strain compensation among wells and barriers improves the external quantum efficiency of high-In-content InGaN-based amber LEDs. The amber LEDs with AlN/Al0.03Ga0.97N barriers have shown an electroluminescence (EL) intensity approximately 2.5-fold that of LEDs with the AlN/GaN barriers at 20 mA.

Original languageEnglish (US)
Article number05FJ06
JournalJapanese Journal of Applied Physics
Issue number5
StatePublished - May 2016
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2016 The Japan Society of Applied Physics.

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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