Investigation of a novel AlZnN semiconductor alloy

A. Trapalis; P. W. Fry; Kenneth Leslie Kennedy; I. Farrer; A. Kean; J. Sharman; J. Heffernan

doi:10.1016/j.mlblux.2020.100052

Investigation of a novel AlZnN semiconductor alloy

A. Trapalis, P. W. Fry, Kenneth Leslie Kennedy, I. Farrer, A. Kean, J. Sharman, J. Heffernan

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Abstract

The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.

Original language	English (US)
Pages (from-to)	100052
Journal	Materials Letters: X
Volume	7
DOIs	https://doi.org/10.1016/j.mlblux.2020.100052
State	Published - Jul 20 2020

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KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors wish to acknowledge funding by the EPSRC (Engineering and Physical Science Research Council, EP/M507611/1) the two funders contributed to the same grant ID in an Industrial CASE Award and Johnson Matthey PLC (Award No. 14550005). The data presented in this paper is available to download for free with the following DOI: 10.15131/shef.data.12327560.

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10.1016/j.mlblux.2020.100052

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title = "Investigation of a novel AlZnN semiconductor alloy",

abstract = "The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.",

author = "A. Trapalis and Fry, {P. W.} and Kennedy, {Kenneth Leslie} and I. Farrer and A. Kean and J. Sharman and J. Heffernan",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors wish to acknowledge funding by the EPSRC (Engineering and Physical Science Research Council, EP/M507611/1) the two funders contributed to the same grant ID in an Industrial CASE Award and Johnson Matthey PLC (Award No. 14550005). The data presented in this paper is available to download for free with the following DOI: 10.15131/shef.data.12327560.",

year = "2020",

month = jul,

day = "20",

doi = "10.1016/j.mlblux.2020.100052",

language = "English (US)",

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journal = "Materials Letters: X",

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T1 - Investigation of a novel AlZnN semiconductor alloy

AU - Trapalis, A.

AU - Fry, P. W.

AU - Kennedy, Kenneth Leslie

AU - Farrer, I.

AU - Kean, A.

AU - Sharman, J.

AU - Heffernan, J.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors wish to acknowledge funding by the EPSRC (Engineering and Physical Science Research Council, EP/M507611/1) the two funders contributed to the same grant ID in an Industrial CASE Award and Johnson Matthey PLC (Award No. 14550005). The data presented in this paper is available to download for free with the following DOI: 10.15131/shef.data.12327560.

PY - 2020/7/20

Y1 - 2020/7/20

N2 - The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.

AB - The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.

UR - http://hdl.handle.net/10754/664522

UR - https://linkinghub.elsevier.com/retrieve/pii/S2590150820300156

UR - http://www.scopus.com/inward/record.url?scp=85088380107&partnerID=8YFLogxK

U2 - 10.1016/j.mlblux.2020.100052

DO - 10.1016/j.mlblux.2020.100052

M3 - Article

SN - 2590-1508

VL - 7

SP - 100052

JO - Materials Letters: X

JF - Materials Letters: X

ER -

Investigation of a novel AlZnN semiconductor alloy

Abstract

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