Investigation of a novel AlZnN semiconductor alloy

A. Trapalis, P. W. Fry, Kenneth Leslie Kennedy, I. Farrer, A. Kean, J. Sharman, J. Heffernan

    Research output: Contribution to journalArticlepeer-review

    1 Scopus citations


    The formation of an AlZnN alloy was investigated as a route to tune the bandgap of Zn3N2. A significant shift of the bandgap was observed in the deposited films, increasing from 1.4 eV for Zn3N2 to 2.8 eV for AlZnN alloys with an AlN fraction of × = 0.19. The refractive index followed a similar trend, approaching that of AlN. The charge carrier density of AlZnN samples was significantly reduced reaching values in the order of 1016 cm−3.
    Original languageEnglish (US)
    Pages (from-to)100052
    JournalMaterials Letters: X
    StatePublished - Jul 20 2020

    Bibliographical note

    KAUST Repository Item: Exported on 2020-10-01
    Acknowledgements: The authors wish to acknowledge funding by the EPSRC (Engineering and Physical Science Research Council, EP/M507611/1) the two funders contributed to the same grant ID in an Industrial CASE Award and Johnson Matthey PLC (Award No. 14550005). The data presented in this paper is available to download for free with the following DOI: 10.15131/


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