Inverse problems for semiconductors: models and methods

A. Leitão; P. A. Markowich; J. P. Zubelli

doi:10.1007/978-0-8176-4554-0_6

Inverse problems for semiconductors: models and methods

A. Leitão, P. A. Markowich, J. P. Zubelli

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

4 Scopus citations

Abstract

The starting point of the mathematical model discussed in this chapter is the system of drift diffusion equations (see (6.2.1a)–(6.2.1f) below). This system of equations, derived more than fifty years ago [vRo50], is the most widely used to describe semiconductor devices. For the current state of technology, this system represents an accurate compromise between efficient numerical solvability of the mathematical model and realistic description of the underlying physics [Mar86, MRS90, Sel84].

Original language	English (US)
Title of host publication	Modeling and Simulation in Science, Engineering and Technology
Publisher	Springer Basel
Pages	117-149
Number of pages	33
Edition	9780817644895
DOIs	https://doi.org/10.1007/978-0-8176-4554-0_6
State	Published - 2007
Externally published	Yes

Publication series

Name	Modeling and Simulation in Science, Engineering and Technology
Number	9780817644895
ISSN (Print)	2164-3679
ISSN (Electronic)	2164-3725

Bibliographical note

Publisher Copyright:
© 2007, Birkhäuser Boston.

ASJC Scopus subject areas

Modeling and Simulation
General Engineering
Fluid Flow and Transfer Processes
Computational Mathematics

Access to Document

10.1007/978-0-8176-4554-0_6

Cite this

@inbook{590bcc0975de4ca399593376eb000f6b,

title = "Inverse problems for semiconductors: models and methods",

abstract = "The starting point of the mathematical model discussed in this chapter is the system of drift diffusion equations (see (6.2.1a)–(6.2.1f) below). This system of equations, derived more than fifty years ago [vRo50], is the most widely used to describe semiconductor devices. For the current state of technology, this system represents an accurate compromise between efficient numerical solvability of the mathematical model and realistic description of the underlying physics [Mar86, MRS90, Sel84].",

author = "A. Leit{\~a}o and Markowich, {P. A.} and Zubelli, {J. P.}",

note = "Publisher Copyright: {\textcopyright} 2007, Birkh{\"a}user Boston.",

year = "2007",

doi = "10.1007/978-0-8176-4554-0_6",

language = "English (US)",

series = "Modeling and Simulation in Science, Engineering and Technology",

publisher = "Springer Basel",

number = "9780817644895",

pages = "117--149",

booktitle = "Modeling and Simulation in Science, Engineering and Technology",

edition = "9780817644895",

}

Inverse problems for semiconductors: models and methods. / Leitão, A.; Markowich, P. A.; Zubelli, J. P.
Modeling and Simulation in Science, Engineering and Technology. 9780817644895. ed. Springer Basel, 2007. p. 117-149 (Modeling and Simulation in Science, Engineering and Technology; No. 9780817644895).

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

TY - CHAP

T1 - Inverse problems for semiconductors

T2 - models and methods

AU - Leitão, A.

AU - Markowich, P. A.

AU - Zubelli, J. P.

PY - 2007

Y1 - 2007

N2 - The starting point of the mathematical model discussed in this chapter is the system of drift diffusion equations (see (6.2.1a)–(6.2.1f) below). This system of equations, derived more than fifty years ago [vRo50], is the most widely used to describe semiconductor devices. For the current state of technology, this system represents an accurate compromise between efficient numerical solvability of the mathematical model and realistic description of the underlying physics [Mar86, MRS90, Sel84].

AB - The starting point of the mathematical model discussed in this chapter is the system of drift diffusion equations (see (6.2.1a)–(6.2.1f) below). This system of equations, derived more than fifty years ago [vRo50], is the most widely used to describe semiconductor devices. For the current state of technology, this system represents an accurate compromise between efficient numerical solvability of the mathematical model and realistic description of the underlying physics [Mar86, MRS90, Sel84].

UR - http://www.scopus.com/inward/record.url?scp=77955818487&partnerID=8YFLogxK

U2 - 10.1007/978-0-8176-4554-0_6

DO - 10.1007/978-0-8176-4554-0_6

M3 - Chapter

AN - SCOPUS:77955818487

T3 - Modeling and Simulation in Science, Engineering and Technology

SP - 117

EP - 149

BT - Modeling and Simulation in Science, Engineering and Technology

PB - Springer Basel

ER -

Inverse problems for semiconductors: models and methods

Abstract

Publication series

Bibliographical note

ASJC Scopus subject areas

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