Intrinsic domain-wall resistivity in half-metallic manganite thin films

S. R. Bakaul*, W. Hu, T. Wu, T. Kimura

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


Deciphering the intrinsic magnetic domain-wall (DW) resistivity of manganite materials by typical low-field magnetoresistance measurement is flawed due to the addition of different galvanomagnetic effects such as, colossal magnetoresistance, Lorentz force magnetoresistance, and anisotropic magnetoresistance (AMR). In this paper, by taking the advantage of rotational anisotropy and the stable rotation of the DW planes in half-metallic manganite La 0.7Sr 0.3MnO 3 film, we deploy a remanent state resistance measurement technique to exclude all the field-dependent spurious effects from the intrinsic DW resistivity. To further refine its magnitude, we calculate the remanent state DW AMR by exploiting the three-dimensional micromagnetic simulation, which reveals a comparable but opposite contribution to the positive DW resistivity. From these results, we estimate the intrinsic DW resistance-area product in La 0.7Sr 0.3MnO 3 to be 1.9×10 -15Ω•m2.

Original languageEnglish (US)
Article number184404
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number18
StatePublished - Nov 5 2012
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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