Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy

Saulius Marcinkevičius, Tomas K. UŽdavinys, Humberto M. Foronda, Daniel A. Cohen, Claude Weisbuch, James S. Speck

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20 Scopus citations


Time-resolved transmission and reflection measurements were performed for bulk GaN at room temperature to evaluate the energy of the first conduction band satellite valley. The measurements showed clear threshold-like spectra for transmission decay and reflection rise times. The thresholds were associated with the onset of the intervalley electron scattering. Transmission measurements with pump and probe pulses in the near infrared produced an intervalley energy of 0.97±0.02 eV. Ultraviolet pump and infrared probe reflection provided a similar value. Comparison of the threshold energies obtained in these experiments allowed estimating the hole effective mass in the upper valence band to be 1.4m0. Modeling of the reflection transients with rate equations has allowed estimating electron-LO (longitudinal optical) phonon scattering rates and the satellite valley effective mass.
Original languageEnglish (US)
JournalPhysical Review B
Issue number23
StatePublished - Dec 19 2016
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2022-06-08
Acknowledgements: Research at KTH was performed within the framework of the Linnaeus Excellence Center for Advanced Optics and Photonics (ADOPT), and was financially supported by the Swedish Research Council (Contract No. 621-2013-4096). Research at UCSB was supported in part by the U.S. Department of Energy (program DE-EE0007096) and by the KACST-KAUST-UCSB Solid State Lighting Program
This publication acknowledges KAUST support, but has no KAUST affiliated authors.


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