Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy

Saulius Marcinkevičius, Tomas K. UŽdavinys, Humberto M. Foronda, Daniel A. Cohen, Claude Weisbuch, James S. Speck

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Time-resolved transmission and reflection measurements were performed for bulk GaN at room temperature to evaluate the energy of the first conduction band satellite valley. The measurements showed clear threshold-like spectra for transmission decay and reflection rise times. The thresholds were associated with the onset of the intervalley electron scattering. Transmission measurements with pump and probe pulses in the near infrared produced an intervalley energy of 0.97±0.02 eV. Ultraviolet pump and infrared probe reflection provided a similar value. Comparison of the threshold energies obtained in these experiments allowed estimating the hole effective mass in the upper valence band to be 1.4m0. Modeling of the reflection transients with rate equations has allowed estimating electron-LO (longitudinal optical) phonon scattering rates and the satellite valley effective mass.
Original languageEnglish (US)
JournalPhysical Review B
Volume94
Issue number23
DOIs
StatePublished - Dec 19 2016
Externally publishedYes

Fingerprint

Dive into the research topics of 'Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy'. Together they form a unique fingerprint.

Cite this