Intermixing of InGaAs/GaAs quantum well using multiple cycles annealing

V. Hongpinyo; Y. H. Ding; C. E. Dimas; Y. Wang; B. S. Ooi; W. Qiu; L. L. Goddard; E. M. Behymer; G. D. Cole; T. C. Bond

doi:10.1109/IPGC.2008.4781312

Intermixing of InGaAs/GaAs quantum well using multiple cycles annealing

V. Hongpinyo^*, Y. H. Ding, C. E. Dimas, Y. Wang, B. S. Ooi, W. Qiu, L. L. Goddard, E. M. Behymer, G. D. Cole, T. C. Bond

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

The authors investigate the effect of intermixing in shallow InGaAs/GaAs quantum well structure using impurity free induced disordering (IFVD) technique. The degradation of the photoluminescence (PL) signal is due to the severe loss of As from the material during high temperature annealing at above intermixing activation energy. The recovery of the PL signal from the intermixed InGaAs/GaAs quantum-well has been found to be achieved by applying a cycle-annealing at 800 °C which is below activation temperature.

Original language	English (US)
Title of host publication	2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
DOIs	https://doi.org/10.1109/IPGC.2008.4781312
State	Published - 2008
Externally published	Yes
Event	2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 - Singapore, Singapore Duration: Dec 8 2008 → Dec 11 2008

Publication series

Name	2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

Other

Other	2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008
Country/Territory	Singapore
City	Singapore
Period	12/8/08 → 12/11/08

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering

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10.1109/IPGC.2008.4781312

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Hongpinyo, V., Ding, Y. H., Dimas, C. E., Wang, Y., Ooi, B. S., Qiu, W., Goddard, L. L., Behymer, E. M., Cole, G. D., & Bond, T. C. (2008). Intermixing of InGaAs/GaAs quantum well using multiple cycles annealing. In 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 Article 4781312 (2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008). https://doi.org/10.1109/IPGC.2008.4781312

@inproceedings{f88a70a04f924641ac67168a7a96c801,

title = "Intermixing of InGaAs/GaAs quantum well using multiple cycles annealing",

abstract = "The authors investigate the effect of intermixing in shallow InGaAs/GaAs quantum well structure using impurity free induced disordering (IFVD) technique. The degradation of the photoluminescence (PL) signal is due to the severe loss of As from the material during high temperature annealing at above intermixing activation energy. The recovery of the PL signal from the intermixed InGaAs/GaAs quantum-well has been found to be achieved by applying a cycle-annealing at 800 °C which is below activation temperature.",

author = "V. Hongpinyo and Ding, {Y. H.} and Dimas, {C. E.} and Y. Wang and Ooi, {B. S.} and W. Qiu and Goddard, {L. L.} and Behymer, {E. M.} and Cole, {G. D.} and Bond, {T. C.}",

year = "2008",

doi = "10.1109/IPGC.2008.4781312",

language = "English (US)",

isbn = "9781424429059",

series = "2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008",

booktitle = "2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008",

note = "2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008 ; Conference date: 08-12-2008 Through 11-12-2008",

}

Hongpinyo, V, Ding, YH, Dimas, CE, Wang, Y, Ooi, BS, Qiu, W, Goddard, LL, Behymer, EM, Cole, GD & Bond, TC 2008, Intermixing of InGaAs/GaAs quantum well using multiple cycles annealing. in 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008., 4781312, 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008, 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008, Singapore, Singapore, 12/8/08. https://doi.org/10.1109/IPGC.2008.4781312

TY - GEN

T1 - Intermixing of InGaAs/GaAs quantum well using multiple cycles annealing

AU - Hongpinyo, V.

AU - Ding, Y. H.

AU - Dimas, C. E.

AU - Wang, Y.

AU - Ooi, B. S.

AU - Qiu, W.

AU - Goddard, L. L.

AU - Behymer, E. M.

AU - Cole, G. D.

AU - Bond, T. C.

PY - 2008

Y1 - 2008

N2 - The authors investigate the effect of intermixing in shallow InGaAs/GaAs quantum well structure using impurity free induced disordering (IFVD) technique. The degradation of the photoluminescence (PL) signal is due to the severe loss of As from the material during high temperature annealing at above intermixing activation energy. The recovery of the PL signal from the intermixed InGaAs/GaAs quantum-well has been found to be achieved by applying a cycle-annealing at 800 °C which is below activation temperature.

AB - The authors investigate the effect of intermixing in shallow InGaAs/GaAs quantum well structure using impurity free induced disordering (IFVD) technique. The degradation of the photoluminescence (PL) signal is due to the severe loss of As from the material during high temperature annealing at above intermixing activation energy. The recovery of the PL signal from the intermixed InGaAs/GaAs quantum-well has been found to be achieved by applying a cycle-annealing at 800 °C which is below activation temperature.

UR - http://www.scopus.com/inward/record.url?scp=67649669869&partnerID=8YFLogxK

U2 - 10.1109/IPGC.2008.4781312

DO - 10.1109/IPGC.2008.4781312

M3 - Conference contribution

AN - SCOPUS:67649669869

SN - 9781424429059

T3 - 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

BT - 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

T2 - 2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008

Y2 - 8 December 2008 through 11 December 2008

ER -

Intermixing of InGaAs/GaAs quantum well using multiple cycles annealing

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