Intermixing of InGaAs quantum dots grown by cycled monolayer deposition

H. S. Djie, D. N. Wang, Boon Ooi*, J. C.M. Hwang, X. M. Fang, Ying Wu, J. M. Fastenau, W. K. Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


We investigate the thermal induced intermixing and the diffusion kinetics of InGaAs quantum dots grown by cycled monolayer deposition subjected to the overgrowth and ex situ annealing. The group-III intermixing, that obeys the Fickian law, reaches a steady state after ex situ annealing up to 850°C. An identical activation energy (E a= 1.5±0.3 eV) obtained with and without subjecting to overgrowth implies that the intermixing is primarily governed by the dynamic annealing of intrinsic defects during the epitaxial overgrowth. The intrinsic intermixing is attributed to the instability of the interface morphology driven by the atomic migration during self-formation of quantum dot.

Original languageEnglish (US)
Article number033527
JournalJournal of Applied Physics
Issue number3
StatePublished - Aug 23 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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