Interfacial Reconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides.

Areej Aljarb; Jiacheng Min; Marim A. Hakami; Jui-Han Fu; Rehab Albaridy; Yi Wan; Sergei Lopatin; Dimitrios Kaltsas; Dipti Naphade; Emre Yengel; Mohamed N. Hedhili; Roaa Sait; Abdul-Hamid M. Emwas; Arwa Kutbee; Merfat Alsabban; Kuo-Wei Huang; Kaimin Shih; Leonidas Tsetseris; Thomas D. Anthopoulos; Vincent Tung; Lain-Jong Li

doi:10.1021/acsnano.2c12103

Interfacial Reconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides.

Areej Aljarb, Jiacheng Min, Marim A. Hakami, Jui-Han Fu, Rehab Albaridy, Yi Wan, Sergei Lopatin, Dimitrios Kaltsas, Dipti Naphade, Emre Yengel, Mohamed N. Hedhili, Roaa Sait, Abdul-Hamid M. Emwas, Arwa Kutbee, Merfat Alsabban, Kuo-Wei Huang, Kaimin Shih, Leonidas Tsetseris, Thomas D. Anthopoulos, Vincent TungLain-Jong Li

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Growing continuous monolayer films of transition-metal dichalcogenides (TMDs) without the disruption of grain boundaries is essential to realize the full potential of these materials for future electronics and optoelectronics, but it remains a formidable challenge. It is generally believed that controlling the TMDs orientations on epitaxial substrates stems from matching the atomic registry, symmetry, and penetrable van der Waals forces. Interfacial reconstruction within the exceedingly narrow substrate-epilayer gap has been anticipated. However, its role in the growth mechanism has not been intensively investigated. Here, we report the experimental conformation of an interfacial reconstructed (IR) layer within the substrate-epilayer gap. Such an IR layer profoundly impacts the orientations of nucleating TMDs domains and, thus, affects the materials' properties. These findings provide deeper insights into the buried interface that could have profound implications for the development of TMD-based electronics and optoelectronics.

Original language	English (US)
Pages (from-to)	10010-10018
Number of pages	9
Journal	ACS Nano
Volume	17
Issue number	11
DOIs	https://doi.org/10.1021/acsnano.2c12103
State	Published - May 30 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-06-16
Acknowledgements: L. J. Li thanks the support from the Jockey Club Hong Kong to the JC STEM lab of 3DIC and the Research Grant of the Council of Hong Kong (CRS_PolyU502/22). Y. Wan and L. J. Li acknowledge the support from the National Key R&D Project of China (2022YFB4044100). A. Aljarb thanks P. Karagiannis for constructive criticism of the manuscript.

ASJC Scopus subject areas

General Physics and Astronomy
General Materials Science
General Engineering

Access to Document

10.1021/acsnano.2c12103

https://repository.kaust.edu.sa/bitstream/10754/692276/1/Interfacial%20reconstructed%20layers%20control%20the%20orientation%20of%20monolayer%20TMDs_%2016%20Oct.pdf

Cite this

Aljarb, A., Min, J., Hakami, M. A., Fu, J.-H., Albaridy, R., Wan, Y., Lopatin, S., Kaltsas, D., Naphade, D., Yengel, E., Hedhili, M. N., Sait, R., Emwas, A.-H. M., Kutbee, A., Alsabban, M., Huang, K.-W., Shih, K., Tsetseris, L., Anthopoulos, T. D., ... Li, L.-J. (2023). Interfacial Reconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides. ACS Nano, 17(11), 10010-10018. https://doi.org/10.1021/acsnano.2c12103

@article{9efdea0182f14fa0a9950636b9aff5ed,

title = "Interfacial Reconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides.",

abstract = "Growing continuous monolayer films of transition-metal dichalcogenides (TMDs) without the disruption of grain boundaries is essential to realize the full potential of these materials for future electronics and optoelectronics, but it remains a formidable challenge. It is generally believed that controlling the TMDs orientations on epitaxial substrates stems from matching the atomic registry, symmetry, and penetrable van der Waals forces. Interfacial reconstruction within the exceedingly narrow substrate-epilayer gap has been anticipated. However, its role in the growth mechanism has not been intensively investigated. Here, we report the experimental conformation of an interfacial reconstructed (IR) layer within the substrate-epilayer gap. Such an IR layer profoundly impacts the orientations of nucleating TMDs domains and, thus, affects the materials' properties. These findings provide deeper insights into the buried interface that could have profound implications for the development of TMD-based electronics and optoelectronics.",

author = "Areej Aljarb and Jiacheng Min and Hakami, {Marim A.} and Jui-Han Fu and Rehab Albaridy and Yi Wan and Sergei Lopatin and Dimitrios Kaltsas and Dipti Naphade and Emre Yengel and Hedhili, {Mohamed N.} and Roaa Sait and Emwas, {Abdul-Hamid M.} and Arwa Kutbee and Merfat Alsabban and Kuo-Wei Huang and Kaimin Shih and Leonidas Tsetseris and Anthopoulos, {Thomas D.} and Vincent Tung and Lain-Jong Li",

note = "KAUST Repository Item: Exported on 2023-06-16 Acknowledgements: L. J. Li thanks the support from the Jockey Club Hong Kong to the JC STEM lab of 3DIC and the Research Grant of the Council of Hong Kong (CRS_PolyU502/22). Y. Wan and L. J. Li acknowledge the support from the National Key R&D Project of China (2022YFB4044100). A. Aljarb thanks P. Karagiannis for constructive criticism of the manuscript.",

year = "2023",

month = may,

day = "30",

doi = "10.1021/acsnano.2c12103",

language = "English (US)",

volume = "17",

pages = "10010--10018",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "11",

}

Aljarb, A, Min, J, Hakami, MA, Fu, J-H, Albaridy, R, Wan, Y, Lopatin, S, Kaltsas, D, Naphade, D, Yengel, E, Hedhili, MN, Sait, R, Emwas, A-HM, Kutbee, A, Alsabban, M, Huang, K-W, Shih, K, Tsetseris, L, Anthopoulos, TD, Tung, V & Li, L-J 2023, 'Interfacial Reconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides.', ACS Nano, vol. 17, no. 11, pp. 10010-10018. https://doi.org/10.1021/acsnano.2c12103

TY - JOUR

T1 - Interfacial Reconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides.

AU - Aljarb, Areej

AU - Min, Jiacheng

AU - Hakami, Marim A.

AU - Fu, Jui-Han

AU - Albaridy, Rehab

AU - Wan, Yi

AU - Lopatin, Sergei

AU - Kaltsas, Dimitrios

AU - Naphade, Dipti

AU - Yengel, Emre

AU - Hedhili, Mohamed N.

AU - Sait, Roaa

AU - Emwas, Abdul-Hamid M.

AU - Kutbee, Arwa

AU - Alsabban, Merfat

AU - Huang, Kuo-Wei

AU - Shih, Kaimin

AU - Tsetseris, Leonidas

AU - Anthopoulos, Thomas D.

AU - Tung, Vincent

AU - Li, Lain-Jong

N1 - KAUST Repository Item: Exported on 2023-06-16 Acknowledgements: L. J. Li thanks the support from the Jockey Club Hong Kong to the JC STEM lab of 3DIC and the Research Grant of the Council of Hong Kong (CRS_PolyU502/22). Y. Wan and L. J. Li acknowledge the support from the National Key R&D Project of China (2022YFB4044100). A. Aljarb thanks P. Karagiannis for constructive criticism of the manuscript.

PY - 2023/5/30

Y1 - 2023/5/30

N2 - Growing continuous monolayer films of transition-metal dichalcogenides (TMDs) without the disruption of grain boundaries is essential to realize the full potential of these materials for future electronics and optoelectronics, but it remains a formidable challenge. It is generally believed that controlling the TMDs orientations on epitaxial substrates stems from matching the atomic registry, symmetry, and penetrable van der Waals forces. Interfacial reconstruction within the exceedingly narrow substrate-epilayer gap has been anticipated. However, its role in the growth mechanism has not been intensively investigated. Here, we report the experimental conformation of an interfacial reconstructed (IR) layer within the substrate-epilayer gap. Such an IR layer profoundly impacts the orientations of nucleating TMDs domains and, thus, affects the materials' properties. These findings provide deeper insights into the buried interface that could have profound implications for the development of TMD-based electronics and optoelectronics.

AB - Growing continuous monolayer films of transition-metal dichalcogenides (TMDs) without the disruption of grain boundaries is essential to realize the full potential of these materials for future electronics and optoelectronics, but it remains a formidable challenge. It is generally believed that controlling the TMDs orientations on epitaxial substrates stems from matching the atomic registry, symmetry, and penetrable van der Waals forces. Interfacial reconstruction within the exceedingly narrow substrate-epilayer gap has been anticipated. However, its role in the growth mechanism has not been intensively investigated. Here, we report the experimental conformation of an interfacial reconstructed (IR) layer within the substrate-epilayer gap. Such an IR layer profoundly impacts the orientations of nucleating TMDs domains and, thus, affects the materials' properties. These findings provide deeper insights into the buried interface that could have profound implications for the development of TMD-based electronics and optoelectronics.

UR - http://hdl.handle.net/10754/692276

UR - https://pubs.acs.org/doi/10.1021/acsnano.2c12103

U2 - 10.1021/acsnano.2c12103

DO - 10.1021/acsnano.2c12103

M3 - Article

C2 - 37249346

SN - 1936-0851

VL - 17

SP - 10010

EP - 10018

JO - ACS Nano

JF - ACS Nano

IS - 11

ER -

Interfacial Reconstructed Layer Controls the Orientation of Monolayer Transition-Metal Dichalcogenides.

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this