Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO[sub 2] gate stacks

C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, Husam N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, J. J. Chambers

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