Interfacial Oxide Formation Limits the Photovoltage of α-SnWO4/NiOx Photoanodes Prepared by Pulsed Laser Deposition

Keyphrases

• Pulsed Laser Deposition 100%
• Photoanode 100%
• Oxide Formation 100%
• NiOx 100%
• Photovoltage 100%
• SnWO4 100%
• Interfacial Oxide 100%
• Protective Layer 40%
• Photoelectrode 40%
• HAXPES 40%
• Monte Carlo 20%
• Band Gap 20%
• Photoelectrochemical Water Splitting 20%
• Density Functional Calculations 20%
• Heterostructure 20%
• Absorber 20%
• Thin Oxide Films 20%
• Upward Band Bending 20%
• Potential Analysis 20%
• Mitigation Strategies 20%
• Photoelectrochemical 20%
• Open Circuit Potential 20%
• Solid Electrolyte 20%
• Tandem Devices 20%
• Solar-to-hydrogen Efficiency 20%
• Sn2+ 20%
• Solar Water Splitting 20%
• Synchrotron Techniques 20%
• Photoemission Spectra 20%
• Spectrum Simulation 20%
• Sn4+ 20%
• Solid-state Interface 20%
• Metal Oxide Photoanodes 20%
• Photoanode Materials 20%

Material Science

• Pulsed Laser Deposition 100%
• X-Ray Photoelectron Spectroscopy 100%
• Oxide Compound 100%
• Electronic Circuit 50%
• Metal Oxide 50%
• Solid Electrolyte 50%
• Photoelectrochemical Water Splitting 50%
• Water Splitting 50%
• Density 50%
• Multilayers 50%