Interfacial Control via Reversible Ionic Motion in Battery-Like Magnetic Tunnel Junctions

Guofei Long; Qian Xue; Qiang Li; Yu Shi; Lin Li; Long Cheng; Peng Li; Junwei Zhang; Xixiang Zhang; Haizhong Guo; Jing Fu; Shandong Li; Jagadeesh S. Moodera; Guo-Xing Miao

doi:10.1002/aelm.202100512

Interfacial Control via Reversible Ionic Motion in Battery-Like Magnetic Tunnel Junctions

Guofei Long, Qian Xue, Qiang Li, Yu Shi, Lin Li, Long Cheng, Peng Li, Junwei Zhang, Xixiang Zhang, Haizhong Guo, Jing Fu, Shandong Li, Jagadeesh S. Moodera, Guo-Xing Miao

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3 Scopus citations

Abstract

Electrical control on interfaces is one of the key approaches to harvest advanced functionalities in modern electronic devices. In this work, it is proposed and demonstrated that a “battery-like” tunnel junction structure can be embedded with added control and functionalities via reversible lithium-ion motion. In a model system of FeCo/FeCoOx/LiF/FeCo magnetic tunnel junctions, the ultrathin LiF barrier makes strong electric fields possible under moderate applied voltages, and can therefore electrically drive reversible lithium-ion migration within the barrier. The ion motion subsequently leads to reversible interfacial modifications that generates over a thousand percent resistance change across the devices. Meanwhile, sizable tunneling magnetoresistance persists and even reverses the sign of spin polarization as a function of the interfacial control. The devices are therefore responsive to both electric and magnetic field manipulations, giving rise to diverse and nonvolatile functionalities.

Original language	English (US)
Pages (from-to)	2100512
Journal	Advanced Electronic Materials
DOIs	https://doi.org/10.1002/aelm.202100512
State	Published - Aug 8 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-08-10
Acknowledgements: This work was supported by the Natural Sciences and Engineering Research Council of Canada (NSERC) Discovery Grant RGPIN-04178, the Ministry of Research, Innovation and Science (MRIS) Early Researcher Award, the National Natural Science Foundation of China (NSFC) Grant Nos. 11504192, 11674187, and 52001232, Shanghai Sailing Program (20YF1452000), the Shanghai Scientific and Technological Innovation Project (20ZR1460200) and the Fundamental Research Funds for the Central Universities. The work was also in part supported by the Canada First Research Excellence Fund. Work at MIT was supported by Army Research Office (W911NF-20-2-0061), the National Science Foundation (NSF-DMR 1700137), Office of Naval Research (N00014-20-1-2306) and Center for Integrated Quantum Materials (NSF-DMR 1231319) for financial support.

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@article{3fed738949eb446e898847b17ea34fbb,

title = "Interfacial Control via Reversible Ionic Motion in Battery-Like Magnetic Tunnel Junctions",

abstract = "Electrical control on interfaces is one of the key approaches to harvest advanced functionalities in modern electronic devices. In this work, it is proposed and demonstrated that a “battery-like” tunnel junction structure can be embedded with added control and functionalities via reversible lithium-ion motion. In a model system of FeCo/FeCoOx/LiF/FeCo magnetic tunnel junctions, the ultrathin LiF barrier makes strong electric fields possible under moderate applied voltages, and can therefore electrically drive reversible lithium-ion migration within the barrier. The ion motion subsequently leads to reversible interfacial modifications that generates over a thousand percent resistance change across the devices. Meanwhile, sizable tunneling magnetoresistance persists and even reverses the sign of spin polarization as a function of the interfacial control. The devices are therefore responsive to both electric and magnetic field manipulations, giving rise to diverse and nonvolatile functionalities.",

author = "Guofei Long and Qian Xue and Qiang Li and Yu Shi and Lin Li and Long Cheng and Peng Li and Junwei Zhang and Xixiang Zhang and Haizhong Guo and Jing Fu and Shandong Li and Moodera, {Jagadeesh S.} and Guo-Xing Miao",

note = "KAUST Repository Item: Exported on 2021-08-10 Acknowledgements: This work was supported by the Natural Sciences and Engineering Research Council of Canada (NSERC) Discovery Grant RGPIN-04178, the Ministry of Research, Innovation and Science (MRIS) Early Researcher Award, the National Natural Science Foundation of China (NSFC) Grant Nos. 11504192, 11674187, and 52001232, Shanghai Sailing Program (20YF1452000), the Shanghai Scientific and Technological Innovation Project (20ZR1460200) and the Fundamental Research Funds for the Central Universities. The work was also in part supported by the Canada First Research Excellence Fund. Work at MIT was supported by Army Research Office (W911NF-20-2-0061), the National Science Foundation (NSF-DMR 1700137), Office of Naval Research (N00014-20-1-2306) and Center for Integrated Quantum Materials (NSF-DMR 1231319) for financial support.",

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doi = "10.1002/aelm.202100512",

language = "English (US)",

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journal = "Advanced Electronic Materials",

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AU - Long, Guofei

AU - Xue, Qian

AU - Li, Qiang

AU - Shi, Yu

AU - Li, Lin

AU - Cheng, Long

AU - Li, Peng

AU - Zhang, Junwei

AU - Zhang, Xixiang

AU - Guo, Haizhong

AU - Fu, Jing

AU - Li, Shandong

AU - Moodera, Jagadeesh S.

AU - Miao, Guo-Xing

N1 - KAUST Repository Item: Exported on 2021-08-10 Acknowledgements: This work was supported by the Natural Sciences and Engineering Research Council of Canada (NSERC) Discovery Grant RGPIN-04178, the Ministry of Research, Innovation and Science (MRIS) Early Researcher Award, the National Natural Science Foundation of China (NSFC) Grant Nos. 11504192, 11674187, and 52001232, Shanghai Sailing Program (20YF1452000), the Shanghai Scientific and Technological Innovation Project (20ZR1460200) and the Fundamental Research Funds for the Central Universities. The work was also in part supported by the Canada First Research Excellence Fund. Work at MIT was supported by Army Research Office (W911NF-20-2-0061), the National Science Foundation (NSF-DMR 1700137), Office of Naval Research (N00014-20-1-2306) and Center for Integrated Quantum Materials (NSF-DMR 1231319) for financial support.

PY - 2021/8/8

Y1 - 2021/8/8

N2 - Electrical control on interfaces is one of the key approaches to harvest advanced functionalities in modern electronic devices. In this work, it is proposed and demonstrated that a “battery-like” tunnel junction structure can be embedded with added control and functionalities via reversible lithium-ion motion. In a model system of FeCo/FeCoOx/LiF/FeCo magnetic tunnel junctions, the ultrathin LiF barrier makes strong electric fields possible under moderate applied voltages, and can therefore electrically drive reversible lithium-ion migration within the barrier. The ion motion subsequently leads to reversible interfacial modifications that generates over a thousand percent resistance change across the devices. Meanwhile, sizable tunneling magnetoresistance persists and even reverses the sign of spin polarization as a function of the interfacial control. The devices are therefore responsive to both electric and magnetic field manipulations, giving rise to diverse and nonvolatile functionalities.

AB - Electrical control on interfaces is one of the key approaches to harvest advanced functionalities in modern electronic devices. In this work, it is proposed and demonstrated that a “battery-like” tunnel junction structure can be embedded with added control and functionalities via reversible lithium-ion motion. In a model system of FeCo/FeCoOx/LiF/FeCo magnetic tunnel junctions, the ultrathin LiF barrier makes strong electric fields possible under moderate applied voltages, and can therefore electrically drive reversible lithium-ion migration within the barrier. The ion motion subsequently leads to reversible interfacial modifications that generates over a thousand percent resistance change across the devices. Meanwhile, sizable tunneling magnetoresistance persists and even reverses the sign of spin polarization as a function of the interfacial control. The devices are therefore responsive to both electric and magnetic field manipulations, giving rise to diverse and nonvolatile functionalities.

UR - http://hdl.handle.net/10754/670487

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DO - 10.1002/aelm.202100512

M3 - Article

SN - 2199-160X

SP - 2100512

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

ER -

Interfacial Control via Reversible Ionic Motion in Battery-Like Magnetic Tunnel Junctions

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